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型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
STW7NA90 | N - CHANNEL 900V - 1.05ohm - 7A - TO-247/ISOWATT218 FAST POWER MOSFET ■ TYPICAL RDS(on) = 1.05 Ω ■ ± 30V GATE TO SOURCE VOLTAGE RATING ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ LOW INTRINSIC CAPACITANCE ■ GATE CHARGE MINIMIZED ■ REDUCED VOLTAGE SPREAD APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLY (SMPS) ■ | STMICROELECTRONICS 意法半导体 | ||
STW7NA90 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 7.0A@ TC=25℃ ·Drain Source Voltage -VDSS= 900V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.3Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | ||
N - CHANNEL 900V - 1.05ohm - 7A - TO-247/ISOWATT218 FAST POWER MOSFET ■ TYPICAL RDS(on) = 1.05 Ω ■ ± 30V GATE TO SOURCE VOLTAGE RATING ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ LOW INTRINSIC CAPACITANCE ■ GATE CHARGE MINIMIZED ■ REDUCED VOLTAGE SPREAD APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLY (SMPS) ■ | STMICROELECTRONICS 意法半导体 | |||
N - CHANNEL 900V - 1.05ohm - 7A - TO-247/ISOWATT218 FAST POWER MOSFET ■ TYPICAL RDS(on) = 1.05 Ω ■ ± 30V GATE TO SOURCE VOLTAGE RATING ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ LOW INTRINSIC CAPACITANCE ■ GATE CHARGE MINIMIZED ■ REDUCED VOLTAGE SPREAD APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLY (SMPS) ■ | STMICROELECTRONICS 意法半导体 | |||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 7.0A@ TC=25℃ ·Drain Source Voltage -VDSS= 900V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.3Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | |||
N - CHANNEL 900V - 1.05 ohm - 7A - Max220 FAST POWER MOS TRANSISTOR N - CHANNEL 900V - 1.05 Ω - 7A - Max220 FAST POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 1.05 Ω ■ ± 30V GATE TO SOURCE VOLTAGE RANTING ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW INTRINSIC CAPACITANCE ■ GATE CHARGE MINIMIZED ■ REDUCED VOLTAGE SPREAD APPLICATIONS ■ HIGH | STMICROELECTRONICS 意法半导体 |
STW7NA90产品属性
- 类型
描述
- 型号
STW7NA90
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
N - CHANNEL 900V - 1.05ohm - 7A - TO-247/ISOWATT218 FAST POWER MOSFET
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST/意法 |
22+ |
TO-247 |
99279 |
||||
ST |
23+ |
TO-247 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
ST品牌 |
2016+ |
TO-247 |
6528 |
房间原装进口现货假一赔十 |
|||
ST |
2025+ |
TO-3P |
3635 |
全新原厂原装产品、公司现货销售 |
|||
ST |
23+ |
TO-247 |
8795 |
||||
ST |
24+ |
TO-247 |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
|||
ST |
25+23+ |
TO-247 |
28234 |
绝对原装正品全新进口深圳现货 |
|||
ST/意法半导体 |
22+ |
TO-247 |
25000 |
只做原装进口现货,专注配单 |
|||
ST |
24+ |
TO-3P |
1000 |
原装现货热卖 |
|||
ST |
23+ |
TO-3P |
65480 |
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STW7NA90规格书下载地址
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原装正品 支持实单
2022-3-30STW6N95K5
製造商: STMicroelectronics 產品類型: MOSFET 技術: Si 安裝風格: Through Hole 封裝/外殼: TO-247-3 晶體管極性: N-Channel 通道數: 1 Channel Vds - 漏-源擊穿電壓: 950 V Id - C連續漏極電流: 9 A Rds On - 漏-源電阻: 1.25 Ohms Vgs - 閘極-源極電壓: - 30 V, + 30 V Vgs th - 門源門限電壓 :
2021-6-9STW8Q14C
STW8Q14C,全新原装当天发货或门市自取0755-82732291.
2020-3-15
DdatasheetPDF页码索引
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