N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS ■ TYPICAL RDS(on) = 1.45 Ω ■ ± 30V GATE TO SOURCE VOLTAGE RATING ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ GATE CHARGE MINIMISED ■ REDUCED THRESHOLD VOLTAGE SPREAD APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SW

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS ■ TYPICAL RDS(on) = 1.45 Q ■ ± 30V GATE TO SOURCE VOLTAGE RATING ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ GATE CHARGE MINIMISED ■ REDUCED THRESHOLD VOLTAGE SPREAD APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SW

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 7.0A@ TC=25℃ ·Drain Source Voltage -VDSS=1000V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.7Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS ■ TYPICAL RDS(on) = 1.45 Ω ■ ± 30V GATE TO SOURCE VOLTAGE RATING ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ GATE CHARGE MINIMISED ■ REDUCED THRESHOLD VOLTAGE SPREAD APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SW

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS ■ TYPICAL RDS(on) = 1.45 Ω ■ ± 30V GATE TO SOURCE VOLTAGE RATING ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ GATE CHARGE MINIMISED ■ REDUCED THRESHOLD VOLTAGE SPREAD APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SW

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 7.0A@ TC=25℃ ·Drain Source Voltage -VDSS=1000V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.7Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.