位置：首页 > IC中文资料第11756页 > STW6NC90Z
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
STW6NC90Z | N-CHANNEL900V-2.1ohm-5.2ATO-247Zener-ProtectedPowerMESH?줚IIMOSFET DESCRIPTION ThethirdgenerationofMESHOVERLAY™PowerMOSFETsforveryhighvoltageexhibitsunsurpassedon-resistanceperunitareawhileintegratingback-to-backZenerdiodesbetweengateand source.SucharrangementgivesextraESDcapabilitywithhigherruggednessperformanceasrequeste | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  |   |
N-CHANNEL900V-2.1ohm-5.2ATO-247Zener-ProtectedPowerMESH?줚IIMOSFET DESCRIPTION ThethirdgenerationofMESHOVERLAY™PowerMOSFETsforveryhighvoltageexhibitsunsurpassedon-resistanceperunitareawhileintegratingback-to-backZenerdiodesbetweengateand source.SucharrangementgivesextraESDcapabilitywithhigherruggednessperformanceasrequeste | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-CHANNEL900V-1.55ohm-5.4ATO-220/FP/D짼PAK/I짼PAKZener-ProtectedPowerMESH?줚IIMOSFET DESCRIPTION ThethirdgenerationofMESHOVERLAY™PowerMOSFETsforveryhighvoltageexhibitsunsurpassedon-resistanceperunitareawhileintegratingback-tobackZenerdiodesbetweengateandsource.SucharrangementgivesextraESDcapabilitywithhigherruggednessperformanceasrequestedby | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-CHANNEL900V-1.55ohm-5.4ATO-220/FP/D짼PAK/I짼PAKZener-ProtectedPowerMESH?줚IIMOSFET DESCRIPTION ThethirdgenerationofMESHOVERLAY™PowerMOSFETsforveryhighvoltageexhibitsunsurpassedon-resistanceperunitareawhileintegratingback-tobackZenerdiodesbetweengateandsource.SucharrangementgivesextraESDcapabilitywithhigherruggednessperformanceasrequestedby | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-CHANNEL900V-1.55ohm-5.4ATO-220/FP/D짼PAK/I짼PAKZener-ProtectedPowerMESH?줚IIMOSFET DESCRIPTION ThethirdgenerationofMESHOVERLAY™PowerMOSFETsforveryhighvoltageexhibitsunsurpassedon-resistanceperunitareawhileintegratingback-tobackZenerdiodesbetweengateandsource.SucharrangementgivesextraESDcapabilitywithhigherruggednessperformanceasrequestedby | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | |
STW6NC90Z产品属性
- 类型
描述
- 型号
STW6NC90Z
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
N-CHANNEL 900V - 2.1ohm - 5.2A TO-247 Zener-Protected PowerMESH⑩III MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
589220 |
16余年资质 绝对原盒原盘 更多数量 |
|||||
isc |
2024 |
TO-247 |
5000 |
国产品牌isc,可替代原装 |
|||
ST |
2020+ |
TO-247 |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
|||
23+ |
N/A |
46080 |
正品授权货源可靠 |
||||
ST |
22+ |
TO-247 |
30000 |
原装正品 |
|||
ST/意法半导体 |
22+ |
TO-247 |
25000 |
只做原装进口现货,专注配单 |
|||
ST |
17+ |
TO-3P |
1000 |
原装现货热卖 |
|||
ST/意法 |
23+ |
TO-247 |
50000 |
全新原装正品现货,支持订货 |
|||
ST/意法 |
22+ |
TO-247 |
97340 |
终端免费提供样品 可开95%增值税发票 |
|||
ADI |
23+ |
TO-247 |
8000 |
只做原装现货 |
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STW6NC90Z规格书下载地址
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原装正品支持实单
2022-3-30STW6N95K5
製造商:STMicroelectronics 產品類型:MOSFET 技術:Si 安裝風格:ThroughHole 封裝/外殼:TO-247-3 晶體管極性:N-Channel 通道數:1Channel Vds-漏-源擊穿電壓:950V Id-C連續漏極電流:9A RdsOn-漏-源電阻:1.25Ohms Vgs-閘極-源極電壓:-30V，+30V Vgsth-門源門限電壓:
2021-6-9STW8Q14C
STW8Q14C，全新原装当天发货或门市自取0755-82732291.
2020-3-15
DdatasheetPDF页码索引
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