N-channel 600 V, 61 mΩ typ., 39 A, MDmesh™ M6 Power MOSFET in a TO‑247 package

Features • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100 avalanche tested • Zener-protected Applications • Switching applications • LLC converters • Boost PFC converters Description The new MDmesh™ M6 technology incorporat

N沟道600 V、61 mOhm典型值、39 A MDmesh M6功率MOSFET，TO-247封装

N沟道600 V、61 mOhm典型值、39 A MDmesh M6功率MOSFET，TO247-4封装

N-channel 600 V, 61 m typ., 39 A, MDmeshTM M6 Power MOSFET in a TO‑247 long leads package

Features • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100 avalanche tested • Zener-protected Description The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of