N沟道650 V、0.073 Ohm典型值、30 A MDmesh M5功率MOSFET，TO-247封装

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-ba • Higher VDSSrating and high dv/dt capability \n• Excellent switching performance \n• 100% avalanche tested;

N-channel 650 V, 0.073, 30 A MDmesh V Power MOSFET

文件：1.58846 Mbytes Page：22 Pages

isc N-Channel MOSFET Transistor

文件：436.26 Kbytes Page：2 Pages

N-channel 650 V, 0.073 typ., 30 A MDmesh M5 Power MOSFET in a TO247-4 package

Features • Extremely low RDS(on) • Low gate charge and input capacitance • Excellent switching performance • 100 avalanche tested Description This device is an N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ hori

N-channel 650 V, 0.073 Ohm typ., 30 A MDmesh M5 Power MOSFET in a TO247-4 package

This device is an N-channel Power MOSFET based on the MDmesh™ M5 innovative verticalprocess technology combined with the well-known PowerMESH™ horizontal layout. Theresulting product offers extremely low on-resistance, making it particularly suitablefor applications requiring high power and superior • Extremely low RDS(on)\n• Low gate charge and input capacitance• Excellent switching performance\n• 100% avalanche tested;

isc N-Channel MOSFET Transistor

FEATURES • Drain Current –ID= 30A@ TC=25℃ • Drain Source Voltage- : VDSS= 650V(Min) • Static Drain-Source On-Resistance : RDS(on) = 95mΩ (Max) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Switching app

N-channel 650 V, 0.073, 30 A MDmesh V Power MOSFET

文件：1.58846 Mbytes Page：22 Pages

isc N-Channel MOSFET Transistor

文件：310.67 Kbytes Page：2 Pages

N-channel 650 V, 0.073, 30 A MDmesh V Power MOSFET

文件：1.58846 Mbytes Page：22 Pages

Low input capacitance and gate charge

文件：1.10742 Mbytes Page：17 Pages