N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

■ TYPICAL RDS(on) = 0.33 Ω ■ ± 30V GATE TO SOURCE VOLTAGE RANTING ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ LOW INTRINSIC CAPACITANCE ■ GATE CHARGE MINIMIZED ■ REDUCED VOLTAGE SPREAD APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE PO

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 16A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.4Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR