isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage : VDSS= 950V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.5Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applic

Ultra low gate charge

文件：1.25841 Mbytes Page：18 Pages

N沟道950 V、0.41 Ohm典型值、12 A SuperMESH(TM) 5功率MOSFET，TO-247封装

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage : VDSS= 950V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.5Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 950V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 0.5Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Ultra low gate charge

文件：1.25841 Mbytes Page：18 Pages

N-channel 950 V, 0.41 廓 typ., 12 A MDmesh??K5 Power MOSFET in a I짼PAKFP package

文件：754.82 Kbytes Page：13 Pages

Ultra low gate charge

文件：1.25841 Mbytes Page：18 Pages