isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=12A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.6Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-CHANNEL 600V - 0.5ohm - 12A TO-247 PowerMesh™II MOSFET

N-CHANNEL 600V - 0.5ohm - 12A TO-247 PowerMesh?줚I MOSFET

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N-CHANNEL 12A - 600V TO-220 PowerMESH IGBT

DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH IGBTs, with outstanding perfomances. The suffix ”H” identifies a family optimized to achieve very low switching times for high frequen

N-CHANNEL 12A - 600V TO-220 PowerMESH??IGBT

DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances. The suffix H identifies a family optimized for high frequency applications (up to 50kHz)in order

N-CHANNEL 18A - 600V TO-220/D2PAK SHORT CIRCUIT PROOF PowerMESH IGBT

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N-CHANNEL 18A - 600V TO-220 SHORT CIRCUIT PROOF PowerMESH??IGBT

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N-CHANNEL 18A - 600V TO-220/D2PAK SHORT CIRCUIT PROOF PowerMESH IGBT

文件：531.51 Kbytes Page：11 Pages