Ultra low gate charge

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N沟道1500 V、1.6 Ohm典型值、7 A MDmesh K5功率MOSFET，TO-247封装

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=12A@ TC=25℃ ·Drain Source Voltage- : VDSS=1500V(Min) ·Static Drain-Source On-Resistance : RDS(on) =2.0Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode

High Voltage Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • International Standard Packages • Molding Epoxies Weet UL 94 V-0 Flammability Classification • Fast Intrinsic Diode • Low Package Inductance Advantages • Easy to Mount • Space Savings •

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode

High Voltage Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • International Standard Packages • Molding Epoxies Weet UL 94 V-0 Flammability Classification • Fast Intrinsic Diode • Low Package Inductance Advantages • Easy to Mount • Space Savings •

N-Channel Enhancement Mode Fast Intrinsic Diode

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