位置：首页 > IC中文资料 > IXTT12N150
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IXTT12N150 | N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode High Voltage Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • International Standard Packages • Molding Epoxies Weet UL 94 V-0 Flammability Classification • Fast Intrinsic Diode • Low Package Inductance Advantages • Easy to Mount • Space Savings • | IXYS 艾赛斯 |   | |
IXTT12N150 | N通道标准MOSFET | Littelfuse 力特 | | |
N通道标准MOSFET | Littelfuse 力特 | | ||
N-Channel Enhancement Mode Fast Intrinsic Diode 文件：148.28 Kbytes Page：4 Pages | IXYS 艾赛斯 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=12A@ TC=25℃ ·Drain Source Voltage- : VDSS=1500V(Min) ·Static Drain-Source On-Resistance : RDS(on) =2.0Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv | ISC 无锡固电 | | ||
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode High Voltage Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • International Standard Packages • Molding Epoxies Weet UL 94 V-0 Flammability Classification • Fast Intrinsic Diode • Low Package Inductance Advantages • Easy to Mount • Space Savings • | IXYS 艾赛斯 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS |
26+ |
原厂原封装 |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
IXYS/艾赛斯 |
21+ |
TO268 |
10000 |
原装现货假一罚十 |
|||
IXYS(艾赛斯) |
23+ |
N/A |
7500 |
IXYS(艾赛斯)全系列在售 |
|||
IXYS |
24+ |
TO-247 |
36500 |
原装现货/放心购买 |
|||
IXYS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
IXYS |
24+ |
TO-268 |
8866 |
||||
IXYS(艾赛斯) |
2526+ |
Original |
50000 |
只做原装优势现货库存,渠道可追溯 |
|||
IXYS/Littelfuse |
22+ |
TO-268 |
15800 |
全新原装正品现货直销 |
|||
Littelfuse/IXYS |
24+ |
TO268 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
IXYS |
23+ |
TO268 |
7000 |
IXTT12N150芯片相关品牌
IXTT12N150规格书下载地址
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2018-12-28
DdatasheetPDF页码索引
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