位置:首页 > IC中文资料第8086页 > STU6013
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STU6013 | SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VBR : 6.8 - 440 Volts PPK : 600 Watts FEATURES : * 600W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1mA above 10V * Pb / RoHS Free | EIC | ||
STU6013 | SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR 文件:61.72 Kbytes Page:4 Pages | EIC | ||
STU6013 | Transient Voltage Suppressors(TVS) | EIC | ||
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWER MOS 7® FREDFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alo | ADPOW | |||
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWER MOS 7® MOSFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alon | ADPOW | |||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast | ADPOW | |||
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWER MOS 7™ Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TMby significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along wit | ADPOW | |||
Silicon Industrial Rectifier 20 Amp Description: The NTE6013 is a 20 Ampere (RMS) silicon rectifier in an electrically isolated TO220 type package with a voltage rating of 600V for use in common anode or common cathode circuits. This device features a glass–passivated junction to ensure long term reliability and stability. In add | NTE |
STU6013产品属性
- 类型
描述
- 型号
STU6013
- 制造商
EIC
- 制造商全称
EIC discrete Semiconductors
- 功能描述
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMHOP |
24+ |
TO252 |
18000 |
原装正品 有挂有货 假一赔十 |
|||
SAMHOP |
25+ |
TO252 |
4611 |
||||
EIC |
2019+PB |
SMB |
87000 |
原装正品 可含税交易 |
|||
SAMHOP/三合微科 |
23+ |
TO-252(D-PAK) |
50000 |
全新原装正品现货,支持订货 |
|||
SAMHOP/三合微科 |
22+ |
TO-252 |
20000 |
只做原装 |
|||
EIC |
新年份 |
SMB |
87000 |
原装正品大量现货,要多可发货,实单带接受价来谈! |
|||
EIC |
23+ |
SMB |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
EIC |
20+ |
SMB |
36800 |
原装优势主营型号-可开原型号增税票 |
|||
SAMHOP |
23+ |
TO252 |
50000 |
全新原装正品现货,支持订货 |
|||
STM三合微 |
26+ |
模块 |
86720 |
代理授权原装正品价格最实惠 本公司承诺假一赔百 |
STU6013规格书下载地址
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