STU10N60M2价格

参考价格:¥4.2349

型号:STU10N60M2 品牌:STMicroelectronics 备注:这里有STU10N60M2多少钱,2026年最近7天走势,今日出价,今日竞价,STU10N60M2批发/采购报价,STU10N60M2行情走势销售排行榜,STU10N60M2报价。
型号 功能描述 生产厂家 企业 LOGO 操作
STU10N60M2

N-channel 600 V, 0.550 typ., 7.5 A MDmesh II Plus low Qg Power MOSFETs in D짼PAK

Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They

STMICROELECTRONICS

意法半导体

STU10N60M2

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=7.5A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.6Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

STU10N60M2

N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh M2 Power MOSFET in IPAK package

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=7.5A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.6Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

N-channel 600 V, 0.550 typ., 7.5 A MDmesh II Plus low Qg Power MOSFETs in D짼PAK

Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They

STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.550 typ., 7.5 A MDmesh II Plus low Qg Power MOSFETs in D짼PAK

Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=7.5A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.6Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

Extremely low gate charge

文件:657.32 Kbytes Page:13 Pages

STMICROELECTRONICS

意法半导体

STU10N60M2产品属性

  • 类型

    描述

  • 型号

    STU10N60M2

  • 制造商

    STMicroelectronics

  • 功能描述

    POWER MOSFET

更新时间:2026-1-2 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法
24+
NA/
3280
原厂直销,现货供应,账期支持!
ST/意法半导体
21+
TO-251-3
8860
原装现货,实单价优
ST/意法半导体
21+
TO-251-3
8860
只做原装,质量保证
ST/意法半导体
23+
TO-251-3
12820
正规渠道,只有原装!
ST/意法半导体
25+
TO-251-3
10000
原装公司现货
ST
22+
TO251
20000
公司只做原装 品质保障
ST/意法半导体
24+
TO-251-3
16960
原装正品现货支持实单
STMicroelectronics
24+
NA
3000
进口原装正品优势供应
ST/意法半导体
2020+
TO-251-3
7600
只做原装正品,卖元器件不赚钱交个朋友
ST
1634+
TO251
100
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