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STU10N60M2价格
参考价格：￥4.2349
型号：STU10N60M2 品牌：STMicroelectronics 备注：这里有STU10N60M2多少钱，2025年最近7天走势，今日出价，今日竞价，STU10N60M2批发/采购报价，STU10N60M2行情走势销售排行榜，STU10N60M2报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
STU10N60M2 | N-channel 600 V, 0.550 typ., 7.5 A MDmesh II Plus low Qg Power MOSFETs in D짼PAK Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They | STMICROELECTRONICS 意法半导体 |   | |
STU10N60M2 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=7.5A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.6Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | |
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=7.5A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.6Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
N-channel 600 V, 0.550 typ., 7.5 A MDmesh II Plus low Qg Power MOSFETs in D짼PAK Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They | STMICROELECTRONICS 意法半导体 | | ||
N-channel 600 V, 0.550 typ., 7.5 A MDmesh II Plus low Qg Power MOSFETs in D짼PAK Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They | STMICROELECTRONICS 意法半导体 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=7.5A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.6Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
Extremely low gate charge 文件：657.32 Kbytes Page：13 Pages | STMICROELECTRONICS 意法半导体 | |
STU10N60M2产品属性
- 类型
描述
- 型号
STU10N60M2
- 制造商
STMicroelectronics
- 功能描述
POWER MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
23+ |
TO-251 |
50000 |
全新原装正品现货,支持订货 |
|||
ST |
2511 |
TO-251 |
16900 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
|||
ST/意法半导体 |
24+ |
TO-251-3 |
6000 |
全新原装深圳仓库现货有单必成 |
|||
ST |
25+ |
TO-251 |
16900 |
原装，请咨询 |
|||
ST |
20+ |
TO251 |
8 |
原装 |
|||
24+ |
N/A |
70000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
ST/意法 |
23+ |
TO-251 |
50000 |
全新原装正品现货,支持订货 |
|||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ST |
22+ |
TO2513 Short Leads IPak TO251A |
9000 |
原厂渠道,现货配单 |
|||
STMicroelectronics |
24+ |
NA |
3000 |
进口原装正品优势供应 |
STU10N60M2规格书下载地址
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