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STTH806价格

参考价格:¥2.9034

型号:STTH806D 品牌:STMicroelectronics 备注:这里有STTH806多少钱,2026年最近7天走势,今日出价,今日竞价,STTH806批发/采购报价,STTH806行情走势销售排行榜,STTH806报价。
型号 功能描述 生产厂家 企业 LOGO 操作
STTH806

TURBOSWITCHO Tandem 600V ULTRA-FAST BOOST DIODE

DESCRIPTION The TURBOSWITCH H is an ultra high performance diode composed of two 300V dice in series. TURBOSWITCH H family drastically cuts losses in the associated MOSFET when run at high dIF/dt. FEATURES AND BENEFITS ■ ESPECIALLY SUITED AS BOOST DIODE IN CONTINUOUS MODE POWER FACTOR C

STMICROELECTRONICS

意法半导体

STTH806

Turbo 2 ultrafast - high voltage rectifier

Description The STTH806 uses ST Turbo2 600 V technology. This device is specially suited for use in switching power supplies, and industrial applications. Features and benefits ■ Ultrafast switching ■ Low reverse current ■ Low thermal resistance ■ Reduces conduction and switching losses ■ I

STMICROELECTRONICS

意法半导体

STTH806

600 V,8 A超高速二极管

The STTH806 uses ST Turbo2 600 V technology. This device is specially suited for use in switching power supplies, and industrial applications. • Ultrafast switching \n• Low thermal resistance \n• Low reverse current \n• Insulated package TO-220AC Ins\t\tInsulated voltage: 2500 VRMSTypical package capacitance: 7 pF\t\t \n• Reduces conduction and switching losses;

STMICROELECTRONICS

意法半导体

Turbo 2 ultrafast - high voltage rectifier

Description The STTH806 uses ST Turbo2 600 V technology. This device is specially suited for use in switching power supplies, and industrial applications. Features and benefits ■ Ultrafast switching ■ Low reverse current ■ Low thermal resistance ■ Reduces conduction and switching losses ■ I

STMICROELECTRONICS

意法半导体

Turbo 2 ultrafast - high voltage rectifier

Description The STTH806 uses ST Turbo2 600 V technology. This device is specially suited for use in switching power supplies, and industrial applications. Features and benefits ■ Ultrafast switching ■ Low reverse current ■ Low thermal resistance ■ Reduces conduction and switching losses ■ I

STMICROELECTRONICS

意法半导体

Tandem 600V HYPERFAST BOOST DIODE

Description The TURBOSWITCH “H” is an ultra high performance diode composed of two 300 V dice in series. TURBOSWITCH “H” family drastically cuts losses in the associated MOSFET when run at high dIF/dt. Features and benefits ■ Especially suited as boost diode in continuous mode power factor corr

STMICROELECTRONICS

意法半导体

600 V、8 A 2引线串联超高速升压二极管

The TURBOSWITCH \\\"H\\\" is an ultra high performance diode composed of two 300 V dice in series. TURBOSWITCH \\\"H\\\" family drastically cuts losses in the associated MOSFET when run at high dIF/dt. • Package Capacitance: C = 7 pF \n• Especially suited as boost diode in continuous mode power factor correctors and hard switching conditions \n• Internal ceramic insulated devices with equal thermal conditions for both 300 V diodes \n• Designed for high di/dt operation. Hyperfast recovery current t;

STMICROELECTRONICS

意法半导体

Turbo 2 ultrafast - high voltage rectifier

Description The STTH806 uses ST Turbo2 600 V technology. This device is specially suited for use in switching power supplies, and industrial applications. Features and benefits ■ Ultrafast switching ■ Low reverse current ■ Low thermal resistance ■ Reduces conduction and switching losses ■ I

STMICROELECTRONICS

意法半导体

Turbo 2 ultrafast - high voltage rectifier

Description The STTH806 uses ST Turbo2 600 V technology. This device is specially suited for use in switching power supplies, and industrial applications. Features and benefits ■ Ultrafast switching ■ Low reverse current ■ Low thermal resistance ■ Reduces conduction and switching losses ■ I

STMICROELECTRONICS

意法半导体

TURBOSWITCHO Tandem 600V ULTRA-FAST BOOST DIODE

DESCRIPTION The TURBOSWITCH H is an ultra high performance diode composed of two 300V dice in series. TURBOSWITCH H family drastically cuts losses in the associated MOSFET when run at high dIF/dt. FEATURES AND BENEFITS ■ ESPECIALLY SUITED AS BOOST DIODE IN CONTINUOUS MODE POWER FACTOR C

STMICROELECTRONICS

意法半导体

600 V、8 A 3引线串联超高速升压二极管

The TURBOSWITCH “H” is an ultra high performance diode composed of two 300V dice in series. TURBOSWITCH “H” family drastically cuts losses in the associated MOSFET when run at high dIF/dt. • INSULATED VERSION: Insulated voltage = 2500 V(RMS)Capacitance = 7 pF\t \n• ESPECIALLY SUITED AS BOOST DIODE IN CONTINUOUS MODE POWER FACTOR CORRECTORS AND HARD SWITCHING CONDITIONS. \n• ULTRA-FAST RECOVERY CURRENT TO COMPETE WITH GaAs DEVICES. SIZE DIMINUTION OF MOSFET AND HEATSINKS ALLOWED. \n• D;

STMICROELECTRONICS

意法半导体

8.0A GLASS PASSIVATED ULTRAFAST DIODE

文件:100.68 Kbytes Page:2 Pages

ZSELEC

淄博圣诺

封装/外壳:TO-220-2 绝缘,TO-220AC 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:DIODE GEN PURP 600V 8A TO220AC 分立半导体产品 二极管 - 整流器 - 单

STMICROELECTRONICS

意法半导体

Tandem 600V HYPERFAST BOOST DIODE

文件:68.59 Kbytes Page:6 Pages

STMICROELECTRONICS

意法半导体

Tandem 600 V hyperfast boost diode

文件:88.9 Kbytes Page:7 Pages

STMICROELECTRONICS

意法半导体

封装/外壳:TO-220-2 绝缘,TO-220AC 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:DIODE GEN PURP 600V 8A TO220AC 分立半导体产品 二极管 - 整流器 - 单

STMICROELECTRONICS

意法半导体

Tandem 600V HYPERFAST BOOST DIODE

文件:68.59 Kbytes Page:6 Pages

STMICROELECTRONICS

意法半导体

Tandem 600 V hyperfast boost diode

文件:88.9 Kbytes Page:7 Pages

STMICROELECTRONICS

意法半导体

8.0A GLASS PASSIVATED ULTRAFAST DIODE

文件:87.13 Kbytes Page:2 Pages

ZSELEC

淄博圣诺

POWER TRANSISTORS(8.0A,150-200V,60W)

MOSPEC

统懋

8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS 60 WATTS 200 VOLTS

This Darlington transistor is a high voltage, high speed device for use in horizontal deflection circuits in TV’s and CRT’s. • High Voltage: VCEV = 330 or 400 V • Fast Switching Speed: tc = 1.0 µs (max) • Low Saturation Voltage: VCE(sat) = 1.5 V (max) • Packaged in JEDEC TO–220AB • Da

MOTOROLA

摩托罗拉

SINGLE-PHASE SILICON BRIDGE(VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 8A)

VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 8A FEATURES • Surge overload rating—200 Amperes peak • Low forward voltage drop and reverse leakage • Small size, simple installation • Plastic package has Underwriter Laboratory Flammability Classification 94V-O

PANJIT

強茂

DPAK SURFACE MOUNT SUPER FAST RECOVERY RECTIFIER(VOLTAGE - 200 to 600 Volts CURRENT - 8.0 Amperes)

VOLTAGE - 200 to 600 Volts CURRENT - 8.0 Amperes FEATURES • For surface mounted applications • Low profile package • Built-in strain relief • Easy pick and place • Superfast recovery times for high efficiency • Plastic package has Underwriters Laboratory Flammability Classification 94V-O •

PANJIT

強茂

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

FEATURES • Low Noise, High Gain • Operable at Low Voltage • Small Feed-back Capacitance Cre = 0.4 pF TYP. • Built-in 2 Transistors (2 × 2SC4959)

NEC

瑞萨

STTH806产品属性

  • 类型

    描述

  • Number of Diodes_spec:

    1

  • Marketing Status:

    Active

  • Repetitive Peak Reverse Voltage_max(V):

    600

  • Average Rectified Current_max(A):

    8

  • VF_max(V):

    1.4

  • Reverse Current_max(mA):

    0.008

  • Reverse Recovery Time_max(ns):

    35

  • Non-Repet Peak Forward Surge Current_max(A):

    90

  • Junction Temperature_max(°C):

    175

  • General Description:

    600 V

更新时间:2026-5-13 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST(意法)
25+
N/A
11543
原装正品现货,原厂订货,可支持含税原型号开票。
ST/意法
25+
D2PAK
32360
ST/意法全新特价STTH806G-TR即刻询购立享优惠#长期有货
ST
14+
TO-220-2
4
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ST/意法
1013+
TO-220
97
只售原装正品
ST/意法
2450+
TO-220
9850
只做原装正品现货或订货假一赔十!
ST/意法半导体
24+
TO-220AC
16900
原厂原装,价格优势,欢迎洽谈!
ST/意法半导体
21+
TO-220AC
8860
只做原装,质量保证
ST/意法半导体
24+
TO-220AC
10000
十年沉淀唯有原装
ST
25+
TO-263
20000
原装,请咨询
STMicroelectronics Asia Pacifi
25+
SMD
918000
明嘉莱只做原装正品现货

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