Tandem 600V HYPERFAST BOOST DIODE

Description The TURBOSWITCH “H” is an ultra high performance diode composed of two 300 V dice in series. TURBOSWITCH “H” family drastically cuts losses in the associated MOSFET when run at high dIF/dt. Features and benefits ■ Especially suited as boost diode in continuous mode power factor corr

600 V、8 A 2引线串联超高速升压二极管

The TURBOSWITCH \\\"H\\\" is an ultra high performance diode composed of two 300 V dice in series. TURBOSWITCH \\\"H\\\" family drastically cuts losses in the associated MOSFET when run at high dIF/dt. • Package Capacitance: C = 7 pF \n• Especially suited as boost diode in continuous mode power factor correctors and hard switching conditions \n• Internal ceramic insulated devices with equal thermal conditions for both 300 V diodes \n• Designed for high di/dt operation. Hyperfast recovery current t;

Tandem 600V HYPERFAST BOOST DIODE

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封装/外壳：TO-220-2 绝缘，TO-220AC 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE GEN PURP 600V 8A TO220AC 分立半导体产品 二极管 - 整流器 - 单

Tandem 600 V hyperfast boost diode

文件：88.9 Kbytes Page：7 Pages

Tandem 600V HYPERFAST BOOST DIODE

文件：68.59 Kbytes Page：6 Pages

Tandem 600 V hyperfast boost diode

文件：88.9 Kbytes Page：7 Pages

POWER TRANSISTORS(8.0A,150-200V,60W)

8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS 60 WATTS 200 VOLTS

This Darlington transistor is a high voltage, high speed device for use in horizontal deflection circuits in TV’s and CRT’s. • High Voltage: VCEV = 330 or 400 V • Fast Switching Speed: tc = 1.0 µs (max) • Low Saturation Voltage: VCE(sat) = 1.5 V (max) • Packaged in JEDEC TO–220AB • Da

SINGLE-PHASE SILICON BRIDGE(VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 8A)

VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 8A FEATURES • Surge overload rating—200 Amperes peak • Low forward voltage drop and reverse leakage • Small size, simple installation • Plastic package has Underwriter Laboratory Flammability Classification 94V-O

DPAK SURFACE MOUNT SUPER FAST RECOVERY RECTIFIER(VOLTAGE - 200 to 600 Volts CURRENT - 8.0 Amperes)

VOLTAGE - 200 to 600 Volts CURRENT - 8.0 Amperes FEATURES • For surface mounted applications • Low profile package • Built-in strain relief • Easy pick and place • Superfast recovery times for high efficiency • Plastic package has Underwriters Laboratory Flammability Classification 94V-O •

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

FEATURES • Low Noise, High Gain • Operable at Low Voltage • Small Feed-back Capacitance Cre = 0.4 pF TYP. • Built-in 2 Transistors (2 × 2SC4959)