BU806晶体管资料

  • BU806别名:BU806三极管、BU806晶体管、BU806晶体三极管

  • BU806生产厂家:德国电子元件股份公司

  • BU806制作材料:Si-N+Darl

  • BU806性质:功率放大 (L)

  • BU806封装形式:直插封装

  • BU806极限工作电压:400V

  • BU806最大电流允许值:8A

  • BU806最大工作频率:<1MHZ或未知

  • BU806引脚数:3

  • BU806最大耗散功率:60W

  • BU806放大倍数

  • BU806图片代号:B-89

  • BU806vtest:400

  • BU806htest:999900

  • BU806atest:8

  • BU806wtest:60

  • BU806代换 BU806用什么型号代替:BU184,

型号 功能描述 生产厂家 企业 LOGO 操作
BU806

High Voltage & Fast Switching Darlington Transistor

High Voltage & Fast Switching Darlington Transistor • Using In Horizontal Output Stages of 110° Crt Video Displays • BUILT-IN SPEED-UP Diode Between Base and Emitter

Fairchild

仙童半导体

BU806

NPN Darlington Power Transistor

This Darlington transistor is a high voltage, high speed device for use in horizontal deflection circuits in TV’s and CRT’s. • High Voltage: VCEV = 330 or 400 V • Fast Switching Speed: tc = 1.0 µs (max) • Low Saturation Voltage: VCE(sat) = 1.5 V (max) • Packaged in JEDEC TO–220AB

ONSEMI

安森美半导体

BU806

FAST SWITCHING DARLINGTON TRANSISTOR

boca

博卡

BU806

NPN SILICON DARLINGTON TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR BU806 and BU807 types are NPN Silicon Darlington Transistors designed for high voltage, high current, fast switching applications.

Central

BU806

POWER TRANSISTORS(8.0A,150-200V,60W)

MOSPEC

统懋

BU806

8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS 60 WATTS 200 VOLTS

This Darlington transistor is a high voltage, high speed device for use in horizontal deflection circuits in TV’s and CRT’s. • High Voltage: VCEV = 330 or 400 V • Fast Switching Speed: tc = 1.0 µs (max) • Low Saturation Voltage: VCE(sat) = 1.5 V (max) • Packaged in JEDEC TO–220AB • Da

Motorola

摩托罗拉

BU806

Darlington Transistor

Features: • They are high voltage, high current devices for fast switching applicatons • Collector-emitter sustaining voltage-VCEO (sus) = 200V (Min.) - BU806 • Low Collector-emitter Saturation Voltage - VCE (SAT) = 1.5V (Max.) at IC = 5A, IB = 50mA

MULTICOMP

易络盟

BU806

SILICON DARLINGTON POWER TRANSISTORS

SILICON DARLINGTON POWER TRANSISTORS They are silicon epitaxial planar NPN power transistors in Darlington configuration mounted in a TO-220 plastic package. They are high voltage, high current devices for fast switching applications. Compliance to RoHS.

COMSET

BU806

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • High Voltage: VCEV= 400V(Min) • Low Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 5A APPLICATIONS • Designed for use in horizontal deflection circuits in TV’s and CRT’s.

ISC

无锡固电

BU806

Silicon NPN Darlington Power Transistor

DESCRIPTION • High Voltage: VCEV= 400V(Min) • Low Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 5A APPLICATIONS • Designed for use in horizontal deflection circuits in TV’s and CRT’s.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

BU806

MEDIUM Voltage & Fast Switching DarlingtonTransistor

DESCRIPTION The devices are silicon Epitaxial Planar NPN power transistors in Darlington configuration with integrated base-emitter speed-up diode, mounted in TO-220 plastic package. They can be used in horizontal output stages of 110 oCRT video displays.

TGS

BU806

MEDIUM VOLTAGE NPN FAST SWITCHING DARLINGTON TRANSISTORS

DESCRIPTION The devices are silicon Epitaxial Planar NPN power transistors in Darlington configuration with integrated base-emitter speed-up diode, mounted in TO-220 plastic package. They can be used in horizontal output stages of 110 oCRT video displays. ■ STMicroelectronics PREFERRED SALESTYP

STMICROELECTRONICS

意法半导体

BU806

FAST SWITCHING DARLINGTON TRANSISTORS

DESCRIPTION The BUB806/807 and BUBO6FI/807F! are silicon epitaxial planar NPN power transistors in Dar- lington configuration with integrated base-emitter speed-up diode, mounted respectively in TO-220 plastic package and ISOWATT220 fully isolated package. They are high voltage, high current

STMICROELECTRONICS

意法半导体

BU806

SEMICONDUCTORS

文件:2.43533 Mbytes Page:31 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

BU806

NPN SILICON DARLINGTON TRANSISTORv

文件:347.35 Kbytes Page:2 Pages

Central

BU806

封装/外壳:TO-220-3 包装:卷带(TR) 描述:TRANS NPN DARL 200V 8A TO220 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

STMICROELECTRONICS

意法半导体

BU806

封装/外壳:TO-220-3 包装:卷带(TR) 描述:TRANS NPN DARL 200V 8A TO220-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

BU806

NPN Epitaxial Silicon Darlington Transistor

ONSEMI

安森美半导体

FAST SWITCHING DARLINGTON TRANSISTORS

DESCRIPTION The BUB806/807 and BUBO6FI/807F! are silicon epitaxial planar NPN power transistors in Dar- lington configuration with integrated base-emitter speed-up diode, mounted respectively in TO-220 plastic package and ISOWATT220 fully isolated package. They are high voltage, high current

STMICROELECTRONICS

意法半导体

FAST SWITCHING DARLINGTON TRANSISTORS

DESCRIPTION The BUB806/807 and BUBO6FI/807F! are silicon epitaxial planar NPN power transistors in Dar- lington configuration with integrated base-emitter speed-up diode, mounted respectively in TO-220 plastic package and ISOWATT220 fully isolated package. They are high voltage, high current

STMICROELECTRONICS

意法半导体

Audio Broadcast Quality 800A Series

Features Deep-drawn steel case with tin plated finish, with two convenient 6-32 mounting studs with hardware. Includes wire leads (minimum length of 4). Frequency response +/- 0.5 db max. from 50 Hz. to 15 Khz. Insertion loss of apx. 1 db. Maximum power level +15 dbm. (except 841A, 842A & 84

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

Low Voltage and Power Applications

文件:992.1 Kbytes Page:8 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

3V Supervisor with Battery Switchover

文件:657.19 Kbytes Page:32 Pages

STMICROELECTRONICS

意法半导体

3V Supervisor with Battery Switchover

文件:657.19 Kbytes Page:32 Pages

STMICROELECTRONICS

意法半导体

3V Supervisor with Battery Switchover

文件:657.19 Kbytes Page:32 Pages

STMICROELECTRONICS

意法半导体

BU806产品属性

  • 类型

    描述

  • 型号

    BU806

  • 功能描述

    达林顿晶体管 NPN Darlington

  • RoHS

  • 制造商

    Texas Instruments

  • 配置

    Octal

  • 晶体管极性

    NPN 集电极—发射极最大电压

  • VCEO

    50 V 发射极 - 基极电压

  • VEBO

    集电极—基极电压

  • 最大直流电集电极电流

    0.5 A

  • 最大工作温度

    + 150 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    SOIC-18

  • 封装

    Reel

更新时间:2025-12-25 22:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
24+
TO-220
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
FAIRCHILD/仙童
24+
NA/
3293
原装现货,当天可交货,原型号开票
ST/意法
24+
TO-2-3
860000
明嘉莱只做原装正品现货
ST
24+
TO-220
2500
原装现货热卖
ON
24+
TO-220
2000
只做原装正品现货 欢迎来电查询15919825718
PH
23+
TO-220
1
SST
原厂封装
9800
原装进口公司现货假一赔百
STE
23+
TO-220
33280
原装正品价格优惠,长期优势供应
ST
25+
TO-220
2225
百分百原装正品 真实公司现货库存 本公司只做原装 可
BU806F
25+
45
45

BU806数据表相关新闻