Tandem 600V HYPERFAST BOOST DIODE

FEATURES ESPECIALLY SUITED AS BOOST DIODE IN CONTINUOUS MODE POWER FACTOR CORRECTORS AND HARD SWITCHING CONDITIONS n DESIGNED FOR HIGH DI/DT OPERATION. HYPERFAST RECOVERY CURRENT TO COMPETE WITH SIC DEVICES. ALLOWS DOWNSIZING OF MOSFET AND HEATSINKS n INTERNAL CERAMIC INSULATED DEVICES W

Tandem 600V HYPERFAST BOOST DIODE

FEATURES ESPECIALLY SUITED AS BOOST DIODE IN CONTINUOUS MODE POWER FACTOR CORRECTORS AND HARD SWITCHING CONDITIONS n DESIGNED FOR HIGH DI/DT OPERATION. HYPERFAST RECOVERY CURRENT TO COMPETE WITH SIC DEVICES. ALLOWS DOWNSIZING OF MOSFET AND HEATSINKS n INTERNAL CERAMIC INSULATED DEVICES W

Tandem 600V Hyperfast Rectifer

DESCRIPTION The TURBOSWITCH “H” is an ultra high performance diode composed of two 300V dice in series. TURBOSWITCH “H” family drastically cuts losses in the associated MOSFET when run at high dIF/dt. FEATURES AND BENEFITS ■ Especially suited as boost diode in continuous mode power fact

600 V、15 A 2引线串联超高速升压二极管

封装/外壳：DOP3I-2 绝缘（直引线） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE GEN PURP 600V 15A DOP3I 分立半导体产品 二极管 - 整流器 - 单

Tandem 600V HYPERFAST BOOST DIODE

文件：72.02 Kbytes Page：5 Pages

ThinkiSemi 15A,600V(2x300V) Dual Tandem Structure Ultra Fast Recovery Rectifiers

文件：5.40392 Mbytes Page：5 Pages

ThinkiSemi 15A,600V(2x300V) Dual Tandem Structure Ultra Fast Recovery Rectifiers

文件：5.25842 Mbytes Page：5 Pages

600 V、15 A 3引线串联超高速升压二极管

封装/外壳：TOP-3 绝缘 包装：管件 描述：DIODE ARRAY GP 600V 15A 3TOPI 分立半导体产品 二极管 - 整流器 - 阵列

200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time

200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time

KNOB

文件：130.94 Kbytes Page：1 Pages

Replace XX with 02, 04, 06, 08 or 12 for number of poles

文件：230.55 Kbytes Page：3 Pages

Premier Supplier of Electronic Hardware

文件：5.0379 Mbytes Page：60 Pages

Broadband Resistive Power Divider

文件：521.62 Kbytes Page：1 Pages