HIGH VOLTAGE ULTRAFAST RECTIFIER

Description The STTH112, which is using ST ultrafast high voltage planar technology, is specially suited for free-wheeling, clamping, snubbering, demagnetization in power supplies and other power switching applications Features ■ Low forwarded voltage drop ■ High reliability ■ High surg

1200 V，1A超高速二极管

The STTH112, which is using ST ultrafast high voltage planar technology, is specially suited for free-wheeling, clamping, snubbering, demagnetization in power supplies and other power switching applications • Low forwarded voltage drop \n• High surge current capability \n• High reliability \n• Planar technology \n• Soft switching for reduced EMI disturbances;

封装/外壳：DO-204AL，DO-41，轴向 包装：剪切带（CT） 描述：DIODE GEN PURP 1.2KV 1A DO41 分立半导体产品 二极管 - 整流器 - 单

High voltage ultrafast rectifier

文件：88.84 Kbytes Page：7 Pages

HIGH VOLTAGE ULTRAFAST RECTIFIER

Description The STTH112, which is using ST ultrafast high voltage planar technology, is specially suited for free-wheeling, clamping, snubbering, demagnetization in power supplies and other power switching applications Features ■ Low forwarded voltage drop ■ High reliability ■ High surg

Single-channel isolated gate driver IC with adjustable DESAT and soft-off

Features • 600 V, 650 V, 900 V, and 1200 V IGBTs, SiC and Si MOSFETs • 40 V absolute maximum output supply voltage • ±3 A, ±6 A, and ±9 A typical sinking and sourcing peak output current • Separate source and sink outputs for hard switching and with active Miller clamp/clamp driver • Adjustme

HIGH VOLTAGE ULTRAFAST RECTIFIER

Description The STTH112, which is using ST ultrafast high voltage planar technology, is specially suited for free-wheeling, clamping, snubbering, demagnetization in power supplies and other power switching applications Features ■ Low forwarded voltage drop ■ High reliability ■ High surg

HIGH VOLTAGE ULTRAFAST RECTIFIER

Description The STTH112, which is using ST ultrafast high voltage planar technology, is specially suited for free-wheeling, clamping, snubbering, demagnetization in power supplies and other power switching applications Features ■ Low forwarded voltage drop ■ High reliability ■ High surg

丝印代码：F112Y；Automotive 1 A - 1200 V ultrafast rectifier

Features • AEC-Q101 qualified • Very low conduction losses • Negligible switching losses • Low forward and reverse recovery times • High junction temperature • ECOPACK2 or ECOPACK3 compliant component on demand

Automotive 1 A - 1200 V ultrafast rectifier

Features • AEC-Q101 qualified • Very low conduction losses • Negligible switching losses • Low forward and reverse recovery times • High junction temperature • ECOPACK2 or ECOPACK3 compliant component on demand

EiceDRIVER™ enhanced 1EDI302xAS/1EDI303xAS evaluation board

The EiceDRIVER™ enhanced 1EDI302xAS/1EDI303xAS evaluation board is a versatile evaluation platform for the EiceDRIVER™ enhanced 1EDI302xAS/1EDI303xAS family. It features a half bridge configuration, see Figure 1. There is the option to mount either the HybridPACK™ DSC IGBT module or a discrete P

汽车级1200 V、1 A超高速二极管

The STTH112-Y, which is using ST’s new 1200 V planar technology, is especially suited for switching mode base drive and transistor circuits.\n\n The device is also intended for use as a free-wheeling diode in power supplies and other power switching applications in automotive K functions. • AEC-Q101 qualified \n• Very low conduction losses \n• Negligible switching losses \n• Low forward and reverse recovery times \n• High junction temperature \n• ECOPACK2 or ECOPACK3 compliant component on demand;

Automotive 1 A - 1200 V ultrafast rectifier

Features • AEC-Q101 qualified • Very low conduction losses • Negligible switching losses • Low forward and reverse recovery times • High junction temperature • ECOPACK2 or ECOPACK3 compliant component on demand

High voltage ultrafast rectifier

文件：88.84 Kbytes Page：7 Pages

High voltage ultrafast rectifier

文件：88.84 Kbytes Page：7 Pages

High voltage ultrafast rectifier

文件：88.84 Kbytes Page：7 Pages

封装/外壳：DO-204AL，DO-41，轴向 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE GEN PURP 1.2KV 1A DO41 分立半导体产品 二极管 - 整流器 - 单

High voltage ultrafast rectifier

文件：88.84 Kbytes Page：7 Pages

Low forward and reverse recovery times

文件：221.47 Kbytes Page：7 Pages

JFET Chopper Transistor (N-Channel- Depletion)

JFET Chopper Transistor N–Channel — Depletion

SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS

Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. • Lead Formed for Surface Mount Applications in Plastic

DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

POWER TRANSISTORS(2.0A,60-100V,50W)

Operational Amplifiers

文件：200.55 Kbytes Page：6 Pages