抗辐照N沟道100V - 48A MOSFET

The STRH100N10 is a N-channel Power MOSFET developed with the Rad-hard STripFET technology in hermetic TO-254AA package.\n\n Specifically designed to sustain Total Ionized Dose and immunity to heavy ion effects, it is qualified as per ESCC 5205/021 detail specification. In case of discrepancies betw • Fast switching \n• 100% avalanche tested \n• Hermetic package \n• 50 krad \n• SEE radiation hardened;

Rad-Hard 100 V, 48 A N-channel Power MOSFET

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HiPerFET Power MOSFETs

HiPerFET Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features ● International standard packages ● JEDECTO-264 AA,epoxymeet UL94V-0, flammability classification ● miniBLOC with Aluminium nitride isolation ● Low RDS (on) HDMOSTM process ● Rugged polysilicon

HIPERFET Power MOSFTETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

TMOS POWER FET 100 AMPERES 100 VOLTS RDS(on) = 0.011 OHM

TMOS E-FET™ Power Field Effect transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with fast recovery time. Designed for h

TMOS POWER FET 100 AMPERES 100 VOLTS RDS(on) = 0.011 OHM

TMOS E-FET™ Power Field Effect transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with fast recovery time. Designed for h

OptiMOS?? Power-Transistor

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