650 V power Schottky silicon carbide diode

Features  No reverse recovery charge in application current range  Switching behavior independent of temperature  Dedicated to PFC applications  Insulated package TO-220AC ins:  Insulated voltage: 2500 V rms  Typical package capacitance: 7 pF  High forward surge capability  ECOPACK

封装/外壳：DO-247-2（直引线） 包装：管件 描述：DIODE SCHOTTKY 650V 20A DO247 分立半导体产品 二极管 - 整流器 - 单

650 V power Schottky silicon carbide diode

Features  No reverse recovery charge in application current range  Switching behavior independent of temperature  Dedicated to PFC applications  Insulated package TO-220AC ins:  Insulated voltage: 2500 V rms  Typical package capacitance: 7 pF  High forward surge capability  ECOPACK

Automotive 650 V power Schottky silicon carbide diode

Features  AEC-Q101 qualified  No reverse recovery charge in application current range  Switching behavior independent of temperature  Dedicated to PFC applications  High forward surge capability  ECOPACK®2 compliant component  PPAP capable  Operating Tj from -40 °C to 175 °C

封装/外壳：DO-247-2（直引线） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 650V 20A DO247 分立半导体产品 二极管 - 整流器 - 单

Automotive 650 V power Schottky silicon carbide diode

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650 V, dual 10 A, power Schottky silicon carbide diode

Features • No or negligible reverse recovery • Switching behavior independent of temperature • Low Forward voltage drop • Operating Tj from -40 °C to +175 °C • ECOPACK2 compliant component • Power efficient product Description The STPSC20065C is an ultra-high performance power Schottky d

650 V power Schottky silicon carbide diode

Features  No reverse recovery charge in application current range  Switching behavior independent of temperature  Dedicated to PFC applications  Insulated package TO-220AC ins:  Insulated voltage: 2500 V rms  Typical package capacitance: 7 pF  High forward surge capability  ECOPACK

Silicon Carbide Schottky Diode

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Enhanced surge capability

文件：519.659 Kbytes Page：4 Pages