Silicon Carbide Schottky Diode

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封装/外壳：TO-220-2 包装：管件 描述：DIODE SCHKY SIC 650V 20A TO-220 分立半导体产品 二极管 - 整流器 - 单

Low VF, 20-A, 650-V, Z-Rec Schottky, TO-220-2 package

650 V power Schottky silicon carbide diode

Features  No reverse recovery charge in application current range  Switching behavior independent of temperature  Dedicated to PFC applications  Insulated package TO-220AC ins:  Insulated voltage: 2500 V rms  Typical package capacitance: 7 pF  High forward surge capability  ECOPACK

650 V, dual 10 A, power Schottky silicon carbide diode

Features • No or negligible reverse recovery • Switching behavior independent of temperature • Low Forward voltage drop • Operating Tj from -40 °C to +175 °C • ECOPACK2 compliant component • Power efficient product Description The STPSC20065C is an ultra-high performance power Schottky d

650 V power Schottky silicon carbide diode

Features  No reverse recovery charge in application current range  Switching behavior independent of temperature  Dedicated to PFC applications  Insulated package TO-220AC ins:  Insulated voltage: 2500 V rms  Typical package capacitance: 7 pF  High forward surge capability  ECOPACK

Enhanced surge capability

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