POWER SCHOTTKY RECTIFIER

DESCRIPTION Dual center tap Schottky rectifier suited for switchmode power supply and high frequency DC to DC converters. Packaged either in SOT-93, TOP-3I or TO-247, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications.

Schottky Barrier Rectifier

FEATURES ·Multilayer Metal -Silicon Potential Structure. ·Beautiful High Temperature Character. ·Have Over Voltage protect loop，high reliability. ·Minimum Lot-to-Lot variations for robust device performance and reliable operation

POWER SCHOTTKY RECTIFIER

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封装/外壳：TO-247-3 包装：管件 描述：DIODE ARRAY SCHOTTKY 45V TO247-3 分立半导体产品 二极管 - 整流器 - 阵列

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 14.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.45Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 17A@ TC=25℃ ·Drain Source Voltage : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.45Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 17A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.45Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

SINGLE POLE, SINGLE THROW CONNECTORIZED SWITCHES

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