位置:首页 > IC中文资料第1241页 > STP9NB50
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STP9NB50 | N-CHANNEL 500V - 0.75 ohm - 8.6 A TO-220/TO-220FP PowerMesh MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per a | STMICROELECTRONICS 意法半导体 | ||
STP9NB50 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 8.6A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.85Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | ||
STP9NB50 | N-CHANNEL 500V - 0.75 ohm - 8.6 A TO-220/TO-220FP PowerMesh MOSFET | STMICROELECTRONICS 意法半导体 | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 4.9A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.85Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | |||
N-CHANNEL 500V - 0.75 ohm - 8.6 A TO-220/TO-220FP PowerMesh MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per a | STMICROELECTRONICS 意法半导体 | |||
N-CHANNEL 500V - 0.75 ohm - 8.6 A TO-220/TO-220FP PowerMesh MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per a | STMICROELECTRONICS 意法半导体 | |||
N - CHANNEL ENHANCEMENT MODE Power MESH MOSFET N - CHANNEL ENHANCEMENT MODE Power MESH™ MOSFET ■ TYPICAL RDS(on) = 0.75 Ω ■ EXTREMELY HIGH dv/dt CAPABILITY ■ AVALANCHERUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ VERY LOW INTRINSIC CAPACITANCE ■ GATE CHARGE MINIMIZED ■ LOW LEAKAGE CURRENT ■ APPLICATIO | STMICROELECTRONICS 意法半导体 | |||
N-Channel 500V (D-S) Power MOSFET 文件:1.04326 Mbytes Page:9 Pages | VBSEMI 微碧半导体 |
STP9NB50产品属性
- 类型
描述
- 型号
STP9NB50
- 功能描述
MOSFET RO 512-FQP9N50
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
56 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
PERICOM |
23+ |
TSSOP |
2569 |
全新原装假一赔十 |
|||
ST |
0748+ |
TO220 |
18 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST |
20+ |
TO-220 |
38560 |
原装优势主营型号-可开原型号增税票 |
|||
ST |
22+ |
TO220 |
12245 |
现货,原厂原装假一罚十! |
|||
ST |
21+ |
TO220 |
1523 |
公司现货,不止网上数量!原装正品,假一赔十! |
|||
ST |
24+ |
TO-220 |
1000 |
原装现货热卖 |
|||
ST |
25+ |
TO-220FP |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
|||
SST |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
ST |
23+ |
TO-220F |
10000 |
专做原装正品,假一罚百! |
STP9NB50规格书下载地址
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STP9NB50数据表相关新闻
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