型号 功能描述 生产厂家 企业 LOGO 操作
STP9NB50

N-CHANNEL 500V - 0.75 ohm - 8.6 A TO-220/TO-220FP PowerMesh MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per a

STMICROELECTRONICS

意法半导体

STP9NB50

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 8.6A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.85Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

STP9NB50

N-CHANNEL 500V - 0.75 ohm - 8.6 A TO-220/TO-220FP PowerMesh MOSFET

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 4.9A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.85Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

N-CHANNEL 500V - 0.75 ohm - 8.6 A TO-220/TO-220FP PowerMesh MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per a

STMICROELECTRONICS

意法半导体

N-CHANNEL 500V - 0.75 ohm - 8.6 A TO-220/TO-220FP PowerMesh MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per a

STMICROELECTRONICS

意法半导体

N - CHANNEL ENHANCEMENT MODE Power MESH MOSFET

N - CHANNEL ENHANCEMENT MODE Power MESH™ MOSFET ■ TYPICAL RDS(on) = 0.75 Ω ■ EXTREMELY HIGH dv/dt CAPABILITY ■ AVALANCHERUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ VERY LOW INTRINSIC CAPACITANCE ■ GATE CHARGE MINIMIZED ■ LOW LEAKAGE CURRENT ■ APPLICATIO

STMICROELECTRONICS

意法半导体

N-Channel 500V (D-S) Power MOSFET

文件:1.04326 Mbytes Page:9 Pages

VBSEMI

微碧半导体

STP9NB50产品属性

  • 类型

    描述

  • 型号

    STP9NB50

  • 功能描述

    MOSFET RO 512-FQP9N50

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-3-1 22:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
2016+
TO220F
2600
只做原装,假一罚十,公司可开17%增值税发票!
ST
25+
TO-220
4500
全新原装、诚信经营、公司现货销售!
ST
0748+
TO220
18
一级代理,专注军工、汽车、医疗、工业、新能源、电力
VBsemi
24+
TO220F
18000
原装正品 有挂有货 假一赔十
VBsemi
24+
TO220F
5000
全新原装正品,现货销售
ST/进口原
17+
TO-220F
6200
ST
24+
N/A
1520
ST
26+
原厂原封装
86720
代理授权原装正品价格最实惠 本公司承诺假一赔百
ST
2447
TO-220
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
ST(意法)
25+
封装
500000
源自原厂成本,高价回收工厂呆滞

STP9NB50数据表相关新闻