型号 功能描述 生产厂家 企业 LOGO 操作
STP9NB50

N-CHANNEL 500V - 0.75 ohm - 8.6 A TO-220/TO-220FP PowerMesh MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per a

STMICROELECTRONICS

意法半导体

STP9NB50

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 8.6A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.85Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

STP9NB50

N-CHANNEL 500V - 0.75 ohm - 8.6 A TO-220/TO-220FP PowerMesh MOSFET

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 4.9A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.85Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

N-CHANNEL 500V - 0.75 ohm - 8.6 A TO-220/TO-220FP PowerMesh MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per a

STMICROELECTRONICS

意法半导体

N-CHANNEL 500V - 0.75 ohm - 8.6 A TO-220/TO-220FP PowerMesh MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per a

STMICROELECTRONICS

意法半导体

N - CHANNEL ENHANCEMENT MODE Power MESH MOSFET

N - CHANNEL ENHANCEMENT MODE Power MESH™ MOSFET ■ TYPICAL RDS(on) = 0.75 Ω ■ EXTREMELY HIGH dv/dt CAPABILITY ■ AVALANCHERUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ VERY LOW INTRINSIC CAPACITANCE ■ GATE CHARGE MINIMIZED ■ LOW LEAKAGE CURRENT ■ APPLICATIO

STMICROELECTRONICS

意法半导体

N-Channel 500V (D-S) Power MOSFET

文件:1.04326 Mbytes Page:9 Pages

VBSEMI

微碧半导体

STP9NB50产品属性

  • 类型

    描述

  • 型号

    STP9NB50

  • 功能描述

    MOSFET RO 512-FQP9N50

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-11-19 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法
24+
NA/
56
优势代理渠道,原装正品,可全系列订货开增值税票
PERICOM
23+
TSSOP
2569
全新原装假一赔十
ST
0748+
TO220
18
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ST
20+
TO-220
38560
原装优势主营型号-可开原型号增税票
ST
22+
TO220
12245
现货,原厂原装假一罚十!
ST
21+
TO220
1523
公司现货,不止网上数量!原装正品,假一赔十!
ST
24+
TO-220
1000
原装现货热卖
ST
25+
TO-220FP
2987
只售原装自家现货!诚信经营!欢迎来电!
SST
原厂封装
9800
原装进口公司现货假一赔百
ST
23+
TO-220F
10000
专做原装正品,假一罚百!

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