N-CHANNEL500V-0.75ohm-8.6ATO-220/TO-220FPPowerMeshMOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprieratyedgeterminationstructure,givesthelowestRDS(on)pera

N-Channel500V(D-S)PowerMOSFET

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N-CHANNELENHANCEMENTMODEPowerMESHMOSFET

N-CHANNELENHANCEMENTMODEPowerMESH™MOSFET ■TYPICALRDS(on)=0.75Ω ■EXTREMELYHIGHdv/dtCAPABILITY ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■VERYLOWINTRINSICCAPACITANCE ■GATECHARGEMINIMIZED ■LOWLEAKAGECURRENT ■APPLICATIO

N-CHANNEL500V-0.75ohm-8.6ATO-220/TO-220FPPowerMeshMOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprieratyedgeterminationstructure,givesthelowestRDS(on)pera

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=8.6A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.85Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.