isc N-Channel MOSFET Transistor

FEATURES • Drain Current –ID= 7A@ TC=25℃ • Drain Source Voltage- : VDSS= 600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.7Ω (Max) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Switching appl

N-channel 600 V, 0.59 , 7 A, FDmesh II Power MOSFET

Description The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body

N-Channel 650V (D-S) Power MOSFET

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8.0A, 600V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 8NM60 is a high voltage super junction MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching

N-channel 650 V@Tjmax, 0.9 Ω, 8 A MDmesh™ Power MOSFET TO-220, TO-220FP, D2PAK, DPAK, IPAK

Description The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The

N-Channel 650V (D-S) Power MOSFET

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N-Channel 650V (D-S) Power MOSFET

文件：1.10714 Mbytes Page：10 Pages

N-Channel 650V (D-S) Power MOSFET

文件：1.10581 Mbytes Page：10 Pages