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8NM60

8.0A, 600V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 8NM60 is a high voltage super junction MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching

UTC

友顺

8.0A, 600V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 8NM60 is a high voltage super junction MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching

UTC

友顺

8.0A, 600V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 8NM60 is a high voltage super junction MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching

UTC

友顺

8.0A, 600V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 8NM60 is a high voltage super junction MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching

UTC

友顺

8.0A, 600V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 8NM60 is a high voltage super junction MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching

UTC

友顺

8.0A, 600V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 8NM60 is a high voltage super junction MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching

UTC

友顺

8.0A, 600V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 8NM60 is a high voltage super junction MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching

UTC

友顺

8.0A, 600V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 8NM60 is a high voltage super junction MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching

UTC

友顺

8.0A, 600V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 8NM60 is a high voltage super junction MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching

UTC

友顺

8.0A, 600V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 8NM60 is a high voltage super junction MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching

UTC

友顺

8.0A, 600V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 8NM60 is a high voltage super junction MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching

UTC

友顺

8.0A, 600V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 8NM60 is a high voltage super junction MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching

UTC

友顺

8.0A, 600V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 8NM60 is a high voltage super junction MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching

UTC

友顺

N-Channel 650V (D-S) Power MOSFET

文件:1.10575 Mbytes Page:10 Pages

VBSEMI

微碧半导体

N-channel 650 V@Tjmax, 0.9 Ω, 8 A MDmesh™ Power MOSFET TO-220, TO-220FP, D2PAK, DPAK, IPAK

Description The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The

STMICROELECTRONICS

意法半导体

N-Channel 650V (D-S) Power MOSFET

文件:1.10714 Mbytes Page:10 Pages

VBSEMI

微碧半导体

N-Channel 650V (D-S) Power MOSFET

文件:1.10581 Mbytes Page:10 Pages

VBSEMI

微碧半导体

更新时间:2025-8-16 16:18:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/
12+
TO-220F
10000
OLANDER
118
全新原装 货期两周
ST
23+
TO-220F
16900
正规渠道,只有原装!
24+
5000
公司存货
ST/进口原
17+
TO-220F
6200
ST
10+
TO-220F
2950
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ST
20+
TO-220F
38560
原装优势主营型号-可开原型号增税票
ADC
22+
MODEL-32
8000
原装正品支持实单
IR
23+
MODULE
8000
只做原装现货
IR
23+
MODULE
7000

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