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STP80NF55价格
参考价格：￥11.3513
型号：STP80NF55 品牌：STMicroelectronics 备注：这里有STP80NF55多少钱，2025年最近7天走势，今日出价，今日竞价，STP80NF55批发/采购报价，STP80NF55行情走势销售排行榜，STP80NF55报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
STP80NF55 | N-channel55V-0.005-80A-TO-220/FP-I2PAK-D2PAKSTripFETIIPowerMOSFET 文件：449.27 Kbytes Page：17 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 |  |   |
STP80NF55 | 封装/外壳：TO-220-3 包装：管件 描述：MOSFET N-CH 55V 80A TO220 分立半导体产品 晶体管 - FET，MOSFET - 单个 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | |
IscN-ChannelMOSFETTransistor •FEATURES •TypicalRDS(on)=0.005Ω •Excellentswitchingperformance •Easytodrive •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Solenoidandrelaydrivers •DC-DCconverters •Automotiveenvironment | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
N-CHANNEL55V-0.005ohm-80ATO-220/TO-220FPSTripFETPOWERMOSFET Description ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronisuniqueSingleFeatureSize™strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemarka | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
N-channel55V-0.005-80A-TO-220/FP-I2PAK-D2PAKSTripFETIIPowerMOSFET Description ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronisuniqueSingleFeatureSize™strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemarka | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
N-channel55V-0.005-80A-TO-220/FP-I2PAK-D2PAKSTripFETIIPowerMOSFET Description ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronisuniqueSingleFeatureSize™strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemarka | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
N-CHANNEL55V-0.005ohm-80ATO-220/TO-220FPSTripFETPOWERMOSFET Description ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronisuniqueSingleFeatureSize™strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemarka | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=6.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-CHANNEL55V-0.0065ohm-80AD2PAK/I2PAK/TO-220STripFET??IIPOWERMOSFET Description ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsunique“singlefeaturesize”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandlesscriticalalignmentstepsthereforearema | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
N-channel55V,0.0065廓,80A,TO-220,D2PAK,TO-247STripFET??PowerMOSFET Description ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsunique“singlefeaturesize”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandlesscriticalalignmentstepsthereforearema | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=80A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.0mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
Automotive-gradeN-channel55V,6.5mtyp.,80ASTripFETTMPowerMOSFETsinD²PAKandTO-220packages Features •Designedforautomotiveapplicationsand AEC-Q101qualified •100avalanchetested •Lowinputcapacitanceandgatecharge •Lowgateinputresistance Description ThesePowerMOSFETshavebeendeveloped usingSTMicroelectronics’uniqueSTripFET process,whichisspecifically | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=80A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=6.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-CHANNEL55V-0.005ohm-80ATO-220STripFETPOWERMOSFET DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronisuniqueSingleFeatureSize™strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemar | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
N-CHANNEL55V-0.0065ohm-80A-TO-220/D2PAKSTripFET??IIPOWERMOSFET DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSTMicroelectronicsunique“SingleFeatureSize™”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalancecharacteristicsandlesscriticalalignmentstepsthereforearemar | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=80A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.0mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-Channel60V(D-S)MOSFET 文件：998.2 Kbytes Page：7 Pages | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | | |
N-channel55V-0.005-80A-TO-220/FP-I2PAK-D2PAKSTripFETIIPowerMOSFET 文件：449.27 Kbytes Page：17 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
N-channel55V-0.005-80A-TO-220/FP-I2PAK-D2PAKSTripFETIIPowerMOSFET 文件：449.27 Kbytes Page：17 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
N-Channel60V(D-S)MOSFET 文件：989.13 Kbytes Page：7 Pages | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
N-channel55V-0.0065廓-80A-TO-220-D2PAK-TO-247STripFET??PowerMOSFET 文件：358.21 Kbytes Page：15 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
N-Channel60V(D-S)MOSFET 文件：998.2 Kbytes Page：7 Pages | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
N-Channel60V(D-S)MOSFET 文件：998.21 Kbytes Page：7 Pages | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | | |
STP80NF55产品属性
- 类型
描述
- 型号
STP80NF55
- 制造商
STMicroelectronics
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
25+ |
TO220 |
860000 |
明嘉莱只做原装正品现货 |
|||
ST/意法半导体 |
25 |
TO-220-3 |
6000 |
原装正品 |
|||
ST/意法 |
21+ |
TO220 |
100 |
原装现货假一赔十 |
|||
ST |
25+ |
TO-220 |
16900 |
原装，请咨询 |
|||
ST/意法半导体 |
22+ |
TO-220-3 |
6003 |
原装正品现货 可开增值税发票 |
|||
ST |
24+ |
TO-220-3(直引 |
858 |
原装现货假一罚十 |
|||
ST |
18+ |
TO-220 |
6493 |
全新原装现货,可出样品,可开增值税发票 |
|||
STMicroelectronics |
21+ |
TO-220 |
1000 |
进口原装!长期供应!绝对优势价格(诚信经营)!! |
|||
ST(意法半导体) |
2024+ |
TO-220-3 |
500000 |
诚信服务,绝对原装原盘 |
|||
ST/意法 |
24+ |
NA/ |
100 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
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