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STP80NF55价格
参考价格:¥11.3513
型号:STP80NF55 品牌:STMicroelectronics 备注:这里有STP80NF55多少钱,2025年最近7天走势,今日出价,今日竞价,STP80NF55批发/采购报价,STP80NF55行情走势销售排行榜,STP80NF55报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
STP80NF55 | 封装/外壳:TO-220-3 包装:管件 描述:MOSFET N-CH 55V 80A TO220 分立半导体产品 晶体管 - FET,MOSFET - 单个 | STMICROELECTRONICS 意法半导体 | ||
STP80NF55 | N-channel 55V - 0.005 - 80A - TO-220 /FP - I2PAK - D2PAK STripFET II Power MOSFET 文件:449.27 Kbytes Page:17 Pages | STMICROELECTRONICS 意法半导体 | ||
Isc N-Channel MOSFET Transistor • FEATURES • Typical RDS(on)=0.005Ω • Excellent switching performance • Easy to drive • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Solenoid and relay drivers • DC-DC converters • Automotive environment | ISC 无锡固电 | |||
N - CHANNEL 55V - 0.005ohm - 80A TO-220/TO-220FP STripFET POWER MOSFET Description This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarka | STMICROELECTRONICS 意法半导体 | |||
N-channel 55V - 0.005 - 80A - TO-220 /FP - I2PAK - D2PAK STripFET II Power MOSFET Description This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarka | STMICROELECTRONICS 意法半导体 | |||
N-channel 55V - 0.005 - 80A - TO-220 /FP - I2PAK - D2PAK STripFET II Power MOSFET Description This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarka | STMICROELECTRONICS 意法半导体 | |||
N - CHANNEL 55V - 0.005ohm - 80A TO-220/TO-220FP STripFET POWER MOSFET Description This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarka | STMICROELECTRONICS 意法半导体 | |||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=60A@ TC=25℃ ·Drain Source Voltage -VDSS=55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 6.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | |||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=80A@ TC=25℃ ·Drain Source Voltage -VDSS=55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | |||
N-channel 55 V, 0.0065 廓, 80 A, TO-220, D2PAK, TO-247 STripFET??Power MOSFET Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalance characteristics and less critical alignment steps therefore a rema | STMICROELECTRONICS 意法半导体 | |||
N-CHANNEL 55V - 0.0065 ohm - 80A D2PAK/I2PAK/TO-220 STripFET??II POWER MOSFET Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalance characteristics and less critical alignment steps therefore a rema | STMICROELECTRONICS 意法半导体 | |||
Automotive-grade N-channel 55 V, 6.5 m typ.,80 A STripFETTM Power MOSFETs in D²PAK and TO-220 packages Features • Designed for automotive applications and AEC-Q101 qualified • 100 avalanche tested • Low input capacitance and gate charge • Low gate input resistance Description These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically | STMICROELECTRONICS 意法半导体 | |||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=80A@ TC=25℃ ·Drain Source Voltage -VDSS=55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 6.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | |||
N - CHANNEL 55V - 0.005 ohm - 80A TO-220 STripFET POWER MOSFET DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remar | STMICROELECTRONICS 意法半导体 | |||
N-CHANNEL 55V - 0.0065ohm - 80A - TO-220/D2PAK STripFET??II POWER MOSFET DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remar | STMICROELECTRONICS 意法半导体 | |||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=80A@ TC=25℃ ·Drain Source Voltage -VDSS=55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | |||
N-channel 55V - 0.005 - 80A - TO-220 /FP - I2PAK - D2PAK STripFET II Power MOSFET 文件:449.27 Kbytes Page:17 Pages | STMICROELECTRONICS 意法半导体 | |||
N-Channel 60 V (D-S) MOSFET 文件:998.2 Kbytes Page:7 Pages | VBSEMI 微碧半导体 | |||
N-Channel 60 V (D-S) MOSFET 文件:989.13 Kbytes Page:7 Pages | VBSEMI 微碧半导体 | |||
N-channel 55V - 0.005 - 80A - TO-220 /FP - I2PAK - D2PAK STripFET II Power MOSFET 文件:449.27 Kbytes Page:17 Pages | STMICROELECTRONICS 意法半导体 | |||
N-channel 55 V - 0.0065 廓 - 80 A - TO-220 - D2PAK - TO-247 STripFET??Power MOSFET 文件:358.21 Kbytes Page:15 Pages | STMICROELECTRONICS 意法半导体 | |||
N-Channel 60 V (D-S) MOSFET 文件:998.2 Kbytes Page:7 Pages | VBSEMI 微碧半导体 | |||
N-Channel 60 V (D-S) MOSFET 文件:998.21 Kbytes Page:7 Pages | VBSEMI 微碧半导体 |
STP80NF55产品属性
- 类型
描述
- 型号
STP80NF55
- 制造商
STMicroelectronics
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST/意法半导体 |
23+ |
TO-220-3 |
16900 |
公司只做原装,可来电咨询 |
|||
24+ |
N/A |
78000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
STMicroelectronics |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
ST |
2022 |
TO-220 |
20000 |
全新原装现货热卖 |
|||
ST |
23+ |
TO-220 |
16900 |
正规渠道,只有原装! |
|||
ST原装 |
24+ |
TO-220 |
30980 |
原装现货/放心购买 |
|||
ST |
2022+ |
TO-220 |
12000 |
只做原装,可提供样品 |
|||
ST |
25+ |
TO-220 |
50 |
只做原装进口!正品支持实单! |
|||
ST/意法 |
17+ |
TO220ISOFULLPACKINLI |
31518 |
原装正品 可含税交易 |
|||
ST/意法半导体 |
23+ |
N/A |
20000 |
STP80NF55规格书下载地址
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DdatasheetPDF页码索引
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