N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on)= 0.012 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ VERY LOW RDS (on) ■ APPLICATION ORIENTED CHARA

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 60A@ TC=25℃ ·Drain Source Voltage -VDSS=50V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 14mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

60A, 50V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 60N05 is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON), high switching speed, high current capacity and low gate charge. The UTC 60N05 is suitable for motor control, AC-DC or DC-DC converters and audio amplifiers, etc

Fast Switching Speed

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N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET

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N?묬hannel Power MOSFET

文件：283.05 Kbytes Page：11 Pages