N-channel 650 V, 0.056 typ., 42 A MDmesh V Power MOSFET

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on resistance, which is unmatched a

Isc N-Channel MOSFET Transistor

文件：301.47 Kbytes Page：2 Pages

N沟道650 V、0.056 Ohm典型值、42 A MDmesh M5功率MOSFET，TO-220封装

N-channel 650 V, 0.056 typ., 42 A MDmesh V Power MOSFET

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on resistance, which is unmatched a

Isc N-Channel MOSFET Transistor

• FEATURES • With TO-220F packaging • High speed switching • Low gate input resistance • Standard level gate drive • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Power supply • Switching appli

N-channel 650 V, 0.056 typ., 42 A MDmesh V Power MOSFET

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on resistance, which is unmatched a

N-channel 650 V, 0.056 廓 typ., 42 A MDmesh??V Power MOSFET in I짼PAK, TO-220, TO-220FP and D짼PAK packages

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on resistance, which is unmatched a

isc N-Channel MOSFET Transistor

文件：263.44 Kbytes Page：2 Pages