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STB57N65M5中文资料
STB57N65M5数据手册规格书PDF详情
Description
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on resistance, which is unmatched among silicon based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
Features
■ Worldwide best RDS(on)*area amongst the silicon based devices
■ Higher VDSS rating, high dv/dt capability
■ Excellent switching performance
■ Easy to drive, 100 avalanche tested
Applications
■ Switching applications
STB57N65M5产品属性
- 类型
描述
- 型号
STB57N65M5
- 功能描述
MOSFET N-Ch 650V 0.056 Ohm 42 A MDmesh V
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
STMicroelectronics Asia Pacifi |
25+ |
SMD |
918000 |
明嘉莱只做原装正品现货 |
|||
STMicroelectronics |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
STMicroelectronics |
21+ |
D2PAK |
3000 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
|||
ST(意法半导体) |
24+ |
D2PAK |
16906 |
支持样品,原装现货,提供技术支持! |
|||
ST/意法 |
24+ |
TO-263-3 |
680 |
原厂授权代理 价格绝对优势 |
|||
ST/意法半导体 |
22+ |
TO-263-3 |
6001 |
原装正品现货 可开增值税发票 |
|||
ST |
24+ |
TO-263 |
5038 |
原装正品现货,假一赔十 |
|||
ST/意法 |
23+ |
TO-263 |
10000 |
原装现货,可做含税 全网最低价 |
|||
ST |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
ST |
24+ |
TO-263 |
8500 |
只做原装正品假一赔十为客户做到零风险!! |
STB57N65M5 价格
参考价格：￥48.1704
STB57N65M5 资料下载更多...
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