N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.018 Ω ■ AVALANCE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175 °C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICA

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 53A@ TC=25℃ ·Drain Source Voltage -VDSS=80V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 24mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Trans MOSFET N-CH 80V 53A 3-Pin(3+Tab) TO-220