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STP4NK60价格
参考价格：￥1.7163
型号：STP4NK60Z 品牌：STMICROELECTRONICS 备注：这里有STP4NK60多少钱，2024年最近7天走势，今日出价，今日竞价，STP4NK60批发/采购报价，STP4NK60行情走势销售排行榜，STP4NK60报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
N-CHANNEL600V-1.76ohm-4ATO-220/FP/DPAK/IPAK/D2PAK/I2PAKZener-ProtectedSuperMESH?줡owerMOSFET Description ThesedevicesareN-channelZener-protectedPowerMOSFETsdevelopedusingSTMicroelectronicsSuperMESH™technology,achievedthroughoptimizationofSTswellestablishedstrip-basedPowerMESH™layout.Inadditiontoasignificantreductioninonresistance,thisdeviceisdesignedto | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  |   | |
N-channel600V-1.76廓-4ASuperMESH??PowerMOSFETDPAK-D2PAK-IPAK-I2PAK-TO-220-TO-220FP Description TheSuperMESH™seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstrip-basedPowerMESH™layout.Inadditiontopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.Suchser | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-channel600V,1.76廓,4ASuperMESH??PowerMOSFETinDPAK,D2PAK,IPAK,I2PAK,TO-220,TO-220FP DESCRIPTION TheSuperMESH™seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstripbasedPowerMESH™layout.Inadditiontopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.Suchser | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-channel600V-1.76廓-4ASuperMESH??PowerMOSFETDPAK-D2PAK-IPAK-I2PAK-TO-220-TO-220FP Description TheSuperMESH™seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstrip-basedPowerMESH™layout.Inadditiontopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.Suchser | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-channel600V,1.76廓,4ASuperMESH??PowerMOSFETinDPAK,D2PAK,IPAK,I2PAK,TO-220,TO-220FP DESCRIPTION TheSuperMESH™seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstripbasedPowerMESH™layout.Inadditiontopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.Suchser | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-CHANNEL600V-1.76ohm-4ATO-220/FP/DPAK/IPAK/D2PAK/I2PAKZener-ProtectedSuperMESH?줡owerMOSFET Description ThesedevicesareN-channelZener-protectedPowerMOSFETsdevelopedusingSTMicroelectronicsSuperMESH™technology,achievedthroughoptimizationofSTswellestablishedstrip-basedPowerMESH™layout.Inadditiontoasignificantreductioninonresistance,thisdeviceisdesignedto | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-Channel650V(D-S)MOSFET 文件：1.09032 Mbytes Page：9 Pages | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | | |
iscN-ChannelMOSFETTransistor 文件：314.27 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
PowerMOSFET 文件：1.06969 Mbytes Page：9 Pages | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
N-channel600V,1.76廓,4ASuperMESH??PowerMOSFETinDPAK,D2PAK,IPAK,I2PAK,TO-220,TO-220FP DESCRIPTION TheSuperMESH™seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstripbasedPowerMESH™layout.Inadditiontopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.Suchser | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=4A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2Ω(Max)@VGS=10V DESCRIPTION ·Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-channel600V,1.7Ωtyp.,4ASuperMESH™PowerMOSFETsinI2PAK,D2PAK,IPAKandDPAKpackages Description Thesehigh-voltagedevicesareZener-protectedN-channelPowerMOSFETs developedusingtheSuperMESH™technologybySTMicroelectronics,an optimizationofthewell-establishedPowerMESH™.Inadditiontoasignificant reductioninon-resistance,thesedevicesaredesignedtoensure | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-Channel650V(D-S)MOSFET 文件：1.08658 Mbytes Page：9 Pages | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
N-Channel650V(D-S)MOSFET 文件：1.08656 Mbytes Page：9 Pages | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | | |
STP4NK60产品属性
- 类型
描述
- 型号
STP4NK60
- 功能描述
MOSFET N-Ch 600 Volt 4 Amp Zener SuperMESH
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
23+ |
TO-220F |
65400 |
||||
ST/意法 |
2410+ |
TO-220 |
80000 |
原装正品.假一赔百.正规渠道.原厂追溯. |
|||
STM |
23+ |
TO-220FP |
20000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST |
21+ |
TO-220FP |
6880 |
只做原装,质量保证 |
|||
ST |
23+ |
TO-220F |
8560 |
受权代理!全新原装现货特价热卖! |
|||
ST专家 |
2022 |
TO-220F |
5880 |
原厂原装正品,价格超越代理 |
|||
ST/意法 |
14+18+11+ |
TO-220F |
929 |
只做原装正品 |
|||
ST |
11+ |
962 |
原装正品长期供货，如假包赔包换 徐小姐13714450367 |
||||
ST |
23+ |
TO-220F |
10000 |
专做原装正品,假一罚百! |
|||
ST |
17+ |
TO-220F |
4800 |
原装正品 |
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DdatasheetPDF页码索引
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