位置：首页 > IC中文资料第1193页 > STP4NC80
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
N-CHANNEL800V-2.4ohm-4ATO-220/FP/D2PAK/I2PAKZener-ProtectedPowerMESH?줚IIMOSFET DESCRIPTION ThethirdgenerationofMESHOVERLAY™PowerMOSFETsforveryhighvoltageexhibitsunsurpassedon-resistanceperunitareawhileintegratingback-to-backZenerdiodesbetweengateandsource.SucharrangementgivesextraESDcapabilitywithhigherruggednessperformanceasrequested | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  |   | |
N-CHANNEL800V-2.4ohm-4ATO-220/FP/D2PAK/I2PAKZener-ProtectedPowerMESH?줚IIMOSFET DESCRIPTION ThethirdgenerationofMESHOVERLAY™PowerMOSFETsforveryhighvoltageexhibitsunsurpassedon-resistanceperunitareawhileintegratingback-to-backZenerdiodesbetweengateandsource.SucharrangementgivesextraESDcapabilitywithhigherruggednessperformanceasrequested | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-CHANNEL800V-2.4ohm-4ATO-220/FP/D2PAK/I2PAKZener-ProtectedPowerMESH?줚IIMOSFET DESCRIPTION ThethirdgenerationofMESHOVERLAY™PowerMOSFETsforveryhighvoltageexhibitsunsurpassedon-resistanceperunitareawhileintegratingback-to-backZenerdiodesbetweengateandsource.SucharrangementgivesextraESDcapabilitywithhigherruggednessperformanceasrequested | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
PowerMOSFET 文件：2.12063 Mbytes Page：9 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | | |
N-CHANNEL800V-2.4ohm-4ATO-220/FP/D2PAK/I2PAKZener-ProtectedPowerMESH?줚IIMOSFET DESCRIPTION ThethirdgenerationofMESHOVERLAY™PowerMOSFETsforveryhighvoltageexhibitsunsurpassedon-resistanceperunitareawhileintegratingback-to-backZenerdiodesbetweengateandsource.SucharrangementgivesextraESDcapabilitywithhigherruggednessperformanceasrequested | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-CHANNEL800V-2.4ohm-4ATO-220/FP/D2PAK/I2PAKZener-ProtectedPowerMESH?줚IIMOSFET DESCRIPTION ThethirdgenerationofMESHOVERLAY™PowerMOSFETsforveryhighvoltageexhibitsunsurpassedon-resistanceperunitareawhileintegratingback-to-backZenerdiodesbetweengateandsource.SucharrangementgivesextraESDcapabilitywithhigherruggednessperformanceasrequested | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | |
STP4NC80产品属性
- 类型
描述
- 型号
STP4NC80
- 功能描述
MOSFET TO-220AB
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
2021+ |
TO-220F |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
ST/意法 |
21+ |
TO-220 |
15000 |
原厂VIP渠道,亚太地区一级代理商,可提供更多数量! |
|||
ADI |
23+ |
TO-220F |
8000 |
只做原装现货 |
|||
ST/意法 |
TO-220F |
265209 |
假一罚十,原包原标签,常备现货 |
||||
ST/意法 |
23+ |
TO-220F |
50000 |
全新原装正品现货,支持订货 |
|||
ST |
22+ |
TO-220F |
30000 |
原装正品 |
|||
ST |
20+ |
TO-220F |
25000 |
全新原装现货 假一赔十 |
|||
ST |
TO-220F |
893993 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
||||
ST |
23+ |
TO-220F |
8795 |
||||
ST |
22 |
TO-220F |
25000 |
3月31原装,微信报价 |
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DdatasheetPDF页码索引
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