位置：首页 > IC中文资料 > STP4NC80ZFP
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STP4NC80ZFP | N-CHANNEL 800V - 2.4ohm - 4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH?줚II MOSFET DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested | STMICROELECTRONICS 意法半导体 |   | |
STP4NC80ZFP | Power MOSFET 文件：2.12063 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | |
N-CHANNEL 800V - 2.4ohm - 4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH?줚II MOSFET DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 800V - 2.4ohm - 4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH?줚II MOSFET DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 800V - 2.4ohm - 4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH?줚II MOSFET DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 800V - 2.4ohm - 4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH?줚II MOSFET DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested | STMICROELECTRONICS 意法半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI |
23+ |
TSSOP |
2000 |
全新原装假一赔十 |
|||
ST/意法 |
24+ |
NA/ |
3279 |
原厂直销,现货供应,账期支持! |
|||
STMicroelectronics |
23+ |
NA |
2725 |
专做原装正品,假一罚百! |
|||
ST全系列 |
25+23+ |
TO-220 |
26412 |
绝对原装正品全新进口深圳现货 |
|||
ST |
17+ |
TO-220F |
6200 |
||||
ST |
25+ |
TO-220F |
86720 |
代理授权原装正品价格最实惠 本公司承诺假一赔百 |
|||
ST |
24+ |
TO-220-3 |
6896 |
||||
ST |
1650+ |
TO-220 |
7500 |
只做原装进口,假一罚十 |
|||
ST |
NEW |
TO-220F |
8795 |
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订 |
|||
ADI |
23+ |
TO-220F |
8000 |
只做原装现货 |
STP4NC80ZFP规格书下载地址
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