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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STP4NC80ZFP | N-CHANNEL 800V - 2.4ohm - 4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH?줚II MOSFET DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested | STMICROELECTRONICS 意法半导体 |   | |
STP4NC80ZFP | Power MOSFET 文件：2.12063 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | |
N-CHANNEL 800V - 2.4ohm - 4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH?줚II MOSFET DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 800V - 2.4ohm - 4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH?줚II MOSFET DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 800V - 2.4ohm - 4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH?줚II MOSFET DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 800V - 2.4ohm - 4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH?줚II MOSFET DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested | STMICROELECTRONICS 意法半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
3279 |
原厂直销,现货供应,账期支持! |
|||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ST |
24+ |
TO-220F |
2500 |
原装现货热卖 |
|||
ST |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
|||
STMicroelectronics |
23+ |
NA |
2725 |
专做原装正品,假一罚百! |
|||
ST全系列 |
25+23+ |
TO-220 |
26412 |
绝对原装正品全新进口深圳现货 |
|||
ST |
2025+ |
TO-220-3 |
3577 |
全新原厂原装产品、公司现货销售 |
|||
ST |
25+ |
TO220 |
16900 |
原装，请咨询 |
|||
ST |
25+ |
TO-TO-220 |
37650 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
ST |
NEW |
TO-220F |
8795 |
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订 |
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DdatasheetPDF页码索引
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