N-CHANNEL1500V-5-4ATO-220/TO-247VeryHighVoltagePowerMESHMOSFET

Description UsingthewellconsolidatedhighvoltageMESHOVERLAY™process,STMicroelectronicshasdesignedanadvancedfamilyofveryhighvoltagePowerMOSFETswithoutstandingperformances. Thestrengthenedlayoutcoupledwiththecompany’sproprietaryedgeterminationstructure,givesth

iscN-ChannelMOSFETTransistor

DESCRIPTION ·DrainCurrent:ID=4A@TC=25℃ ·DrainSourceVoltage :VDSS=1500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=7Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·motordrive,DC

N-channel1500V-5廓-4A-PowerMESH??PowerMOSFETTO-220-TO-220FH-TO-247-TO-3PF

文件：459.62 Kbytes Page：16 Pages

N-channel1500V-5廓-4A-TO-220/TO-247VeryhighPowerMESH??PowerMOSFET

文件：365.47 Kbytes Page：14 Pages

N-channel1500V,5廓,4A,PowerMESH??PowerMOSFETinTO-220,TO-247,TO-3PF

文件：762.25 Kbytes Page：15 Pages

N-channel1500V-5廓-4A-TO-220/TO-247VeryhighPowerMESH??PowerMOSFET

文件：365.47 Kbytes Page：14 Pages

4A,120Vand150V,0.400Ohm,N-ChannelPowerMOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrive

N-ChannelMOSFET

文件：710.04 Kbytes Page：5 Pages