型号 功能描述 生产厂家 企业 LOGO 操作
STP45NE06

N - CHANNEL 60V - 0.022ohm - 45A - TO-220/TO-220FP STripFETO POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique Single Feature Size strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable man

STMICROELECTRONICS

意法半导体

STP45NE06

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 45A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance; -RDS(on) = 28mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

STP45NE06

N - CHANNEL 60V - 0.022ohm - 45A - TO-220/TO-220FP STripFETO POWER MOSFET

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 25A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance; -RDS(on) = 28mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

N - CHANNEL 60V - 0.022ohm - 45A - TO-220/TO-220FP STripFETO POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique Single Feature Size strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable man

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 45A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance; -RDS(on) = 28mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

N - CHANNEL 60V - 0.022ohm - 45A - TO-220/TO-220FP STripFET POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remark

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 25A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance; -RDS(on) = 28mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

N - CHANNEL 60V - 0.022ohm - 45A - TO-220/TO-220FP STripFET POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remark

STMICROELECTRONICS

意法半导体

N - CHANNEL 60V - 0.022ohm - 45A - TO-220/TO-220FP STripFET POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remark

STMICROELECTRONICS

意法半导体

STP45NE06产品属性

  • 类型

    描述

  • 型号

    STP45NE06

  • 功能描述

    MOSFET N-CH 60V 45A

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-1-27 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
STMicroelectronics
25+
N/A
18798
正规渠道,免费送样。支持账期,BOM一站式配齐
ST
24+
TO-220F
2500
原装现货热卖
ST
05+
TO-220
10000
全新原装 绝对有货
STM
25+
18
公司优势库存 热卖中!
ST
26+
原厂原封装
86720
代理授权原装正品价格最实惠 本公司承诺假一赔百
ST
25+
TO-220
16900
原装,请咨询
ST
26+
TO-220
8795
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订
ST全系列
25+23+
TO-220F
26301
绝对原装正品全新进口深圳现货
ST
26+
TO-220F
60000
只有原装 可配单
ST
23+
TO-220
16900
正规渠道,只有原装!

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