DESCRIPTION

This Power Mosfet is the latest development of SGS-THOMSON unique Single Feature Size strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

■ TYPICAL RDS(on) = 0.022 Ω

■ EXCEPTIONAL dv/dt CAPABILITY

■ 100 AVALANCHE TESTED

■ LOW GATE CHARGE 100 °C

■ APPLICATION ORIENTED

CHARACTERIZATION

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SOLENOID AND RELAY DRIVERS

■ MOTOR CONTROL, AUDIO AMPLIFIERS

■ DC-DC & DC-AC CONVERTERS