isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 40A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 22mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N - CHANNEL 30V - 0.020 ohm - 40A TO-220 STripFET POWER MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique single feature size strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remar

N-channel 30 V, 0.018, 40 A TO-220, TO-220FP STripFET Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique single feature size strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remar

N-channel 30V - 0.018廓 - 40A - TO-220 STripFET??Power MOSFET

文件：254.55 Kbytes Page：12 Pages

N沟道30V - 0.020 Ohm - 40A - TO-220 StripFET(TM) II MOSFET

N-channel 30V - 0.018廓 - 40A - TO-220 STripFET??Power MOSFET

文件：254.55 Kbytes Page：12 Pages

N-channel 30 V, 0.018, 40 A TO-220, TO-220FP STripFET Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique single feature size strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remar

N - CHANNEL 30V - 0.020 ohm - 40A TO-220 STripFET POWER MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique single feature size strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remar

N - CHANNEL 30V - 0.020 ohm - 40A D2PAK STripFET POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a rema

N-CHANNEL 30V - 0.012 ohm - 40A DPAK LOW GATE CHARGE STripFET POWER MOSFET

Description This application specific Power MOSFET is the third generation of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives th

N-channel 30V - 0.0090ohm - 40A - DPAK Low gate charge STripFET TM II Power MOSFET

文件：359.46 Kbytes Page：13 Pages