Extremely low gate charge

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N沟道650 V、0.087 Ohm典型值、32 A MDmesh M2功率MOSFET，TO-220封装

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 32A@ TC=25℃ ·Drain Source Voltage -VDSS= 650V(Min) -RDS(on) = 99mΩ(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Switching applications

Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficie

N-channel 650 V, 0.087 廓 typ., 32 A MDmesh??M2 Power MOSFET in a TO-220FP package

文件：441.98 Kbytes Page：13 Pages

Extremely low gate charge

文件：453.59 Kbytes Page：14 Pages