Description

This device is an N-channel Power MOSFET

developed using MDmesh™ M2 technology.

Thanks to its strip layout and an improved vertical

structure, the device exhibits low on-resistance

and optimized switching characteristics,

rendering it suitable for the most demanding high

efficiency converters.

Features

• Extremely low gate charge

• Excellent output capacitance (COSS) profile

• 100 avalanche tested

• Zener-protected

Applications

• Switching applications