N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

■ TYPICAL RDS(on) = 0.03 ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■HIGH CURRENT CAPABILITY ■175°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SOLENO

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

■ TYPICAL RDS(on) = 0.03 ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■HIGH CURRENT CAPABILITY ■175°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SOLENO

60V N-Channel Enhancement Mode Power MOSFET

Features VDS = 60V,ID =40A RDS(ON),14mΩ(Typ) @ VGS =10V RDS(ON),16mΩ(Typ) @ VGS =4.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is acquired

60V N-Channel Enhancement Mode Power MOSFET

General Description The 40N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS = 60V,ID =40A RDS(ON),14mΩ(Typ) @ VGS =10V RDS(ON),16mΩ(Typ) @ VGS =4.5V Advanced Trench Technology

Fast Switching

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N-Channel 60-V (D-S) MOSFET

文件：897.86 Kbytes Page：6 Pages

38A竊?0V N-CHANNEL MOSFET

文件：196.75 Kbytes Page：5 Pages