丝印代码：40N06；60V N-Channel Enhancement Mode Power MOSFET

Features VDS = 60V,ID =40A RDS(ON),14mΩ(Typ) @ VGS =10V RDS(ON),16mΩ(Typ) @ VGS =4.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is acquired

丝印代码：40N06；60V N-Channel Enhancement Mode Power MOSFET

General Description The 40N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS = 60V,ID =40A RDS(ON),14mΩ(Typ) @ VGS =10V RDS(ON),16mΩ(Typ) @ VGS =4.5V Advanced Trench Technology

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