型号 功能描述 生产厂家 企业 LOGO 操作
STP3NC60

N-CHANNEL 600V - 3.3ohm - 3A TO-220/TO-220FP PowerMeshII MOSFET

The PowerMESH II is the evolution of the first generation of MESH OVERLAY™.The layout refinements introduced greatly improve the Ron area figure of merit while keeping the device at the lead ing edge for what concerns swithing speed, gate charge and ruggedness.

STMICROELECTRONICS

意法半导体

STP3NC60

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 3.0A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance; -RDS(on) = 3.6Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

STP3NC60

N-Channel 650 V (D-S) MOSFET

文件:1.0913 Mbytes Page:9 Pages

VBSEMI

微碧半导体

STP3NC60

N-CHANNEL 600V - 3.3ohm - 3A TO-220/TO-220FP PowerMeshII MOSFET

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 3.0A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance; -RDS(on) = 3.6Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

N-CHANNEL 600V - 3.3ohm - 3A TO-220/TO-220FP PowerMeshII MOSFET

The PowerMESH II is the evolution of the first generation of MESH OVERLAY™.The layout refinements introduced greatly improve the Ron area figure of merit while keeping the device at the lead ing edge for what concerns swithing speed, gate charge and ruggedness.

STMICROELECTRONICS

意法半导体

N-CHANNEL 600V - 3.3ohm - 3A TO-220/TO-220FP PowerMeshII MOSFET

The PowerMESH II is the evolution of the first generation of MESH OVERLAY™.The layout refinements introduced greatly improve the Ron area figure of merit while keeping the device at the lead ing edge for what concerns swithing speed, gate charge and ruggedness.

STMICROELECTRONICS

意法半导体

N-CHANNEL 600V - 1.8ohm - 3.2A DPAK / IPAK PowerMesh?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 1.

STMICROELECTRONICS

意法半导体

N - CHANNEL 600V - 3.3ohm- 3A - D2PAK/I2PAK PowerMESHII MOSFET

文件:94.35 Kbytes Page:9 Pages

STMICROELECTRONICS

意法半导体

STP3NC60产品属性

  • 类型

    描述

  • 型号

    STP3NC60

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    N-CHANNEL 600V - 3.3ohm - 3A TO-220/TO-220FP PowerMeshII MOSFET

更新时间:2025-10-8 10:06:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法
25+
TO-220F
54648
百分百原装现货 实单必成
S
22+
TO-220
6000
十年配单,只做原装
原装STM
24+
TO-220F
63200
一级代理/放心采购
ST/
24+
TO-220
12000
原装正品 假一罚十 可拆样
ST/意法
23+
TO-220
50000
全新原装正品现货,支持订货
ST/意法
2450+
TO-220
9850
只做原装正品现货或订货假一赔十!
ST
0412+
TO220
50
一级代理,专注军工、汽车、医疗、工业、新能源、电力
-
23+
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
ST
25000
50000
一级代理 原装正品假一罚十价格优势长期供货
ST
24+
TO-220
1250
原装现货热卖

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