型号 功能描述 生产厂家 企业 LOGO 操作
STP3NC60

N-CHANNEL 600V - 3.3ohm - 3A TO-220/TO-220FP PowerMeshII MOSFET

The PowerMESH II is the evolution of the first generation of MESH OVERLAY™.The layout refinements introduced greatly improve the Ron area figure of merit while keeping the device at the lead ing edge for what concerns swithing speed, gate charge and ruggedness.

STMICROELECTRONICS

意法半导体

STP3NC60

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 3.0A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance; -RDS(on) = 3.6Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

STP3NC60

N-Channel 650 V (D-S) MOSFET

文件:1.0913 Mbytes Page:9 Pages

VBSEMI

微碧半导体

STP3NC60

N-CHANNEL 600V - 3.3ohm - 3A TO-220/TO-220FP PowerMeshII MOSFET

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 3.0A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance; -RDS(on) = 3.6Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

N-CHANNEL 600V - 3.3ohm - 3A TO-220/TO-220FP PowerMeshII MOSFET

The PowerMESH II is the evolution of the first generation of MESH OVERLAY™.The layout refinements introduced greatly improve the Ron area figure of merit while keeping the device at the lead ing edge for what concerns swithing speed, gate charge and ruggedness.

STMICROELECTRONICS

意法半导体

N-CHANNEL 600V - 3.3ohm - 3A TO-220/TO-220FP PowerMeshII MOSFET

The PowerMESH II is the evolution of the first generation of MESH OVERLAY™.The layout refinements introduced greatly improve the Ron area figure of merit while keeping the device at the lead ing edge for what concerns swithing speed, gate charge and ruggedness.

STMICROELECTRONICS

意法半导体

N-CHANNEL 600V - 1.8ohm - 3.2A DPAK / IPAK PowerMesh?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 1.

STMICROELECTRONICS

意法半导体

N - CHANNEL 600V - 3.3ohm- 3A - D2PAK/I2PAK PowerMESHII MOSFET

文件:94.35 Kbytes Page:9 Pages

STMICROELECTRONICS

意法半导体

STP3NC60产品属性

  • 类型

    描述

  • 型号

    STP3NC60

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    N-CHANNEL 600V - 3.3ohm - 3A TO-220/TO-220FP PowerMeshII MOSFET

更新时间:2026-3-1 21:25:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
25+23+
TO-220
16111
绝对原装正品全新进口深圳现货
ST/意法
2026+
TO-220F
54648
百分百原装现货 实单必成
ST
25+
TO-220
4500
全新原装、诚信经营、公司现货销售!
ST
0412+
TO220
50
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ST/意法
2450+
TO-220
9850
只做原装正品现货或订货假一赔十!
ST/
24+
TO-220
5000
全新原装正品,现货销售
ST
17+
TO-220F
6200
ST
26+
TO-247
86720
代理授权原装正品价格最实惠 本公司承诺假一赔百
ST
24+
TO-220F
104000
原装STM
19+
TO-220F
20000

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