型号 功能描述 生产厂家 企业 LOGO 操作
STP3NC60

N-CHANNEL 600V - 3.3ohm - 3A TO-220/TO-220FP PowerMeshII MOSFET

The PowerMESH II is the evolution of the first generation of MESH OVERLAY™.The layout refinements introduced greatly improve the Ron area figure of merit while keeping the device at the lead ing edge for what concerns swithing speed, gate charge and ruggedness.

STMICROELECTRONICS

意法半导体

STP3NC60

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 3.0A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance; -RDS(on) = 3.6Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

STP3NC60

N-Channel 650 V (D-S) MOSFET

文件:1.0913 Mbytes Page:9 Pages

VBSEMI

微碧半导体

STP3NC60

N-CHANNEL 600V - 3.3ohm - 3A TO-220/TO-220FP PowerMeshII MOSFET

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 3.0A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance; -RDS(on) = 3.6Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

N-CHANNEL 600V - 3.3ohm - 3A TO-220/TO-220FP PowerMeshII MOSFET

The PowerMESH II is the evolution of the first generation of MESH OVERLAY™.The layout refinements introduced greatly improve the Ron area figure of merit while keeping the device at the lead ing edge for what concerns swithing speed, gate charge and ruggedness.

STMICROELECTRONICS

意法半导体

N-CHANNEL 600V - 3.3ohm - 3A TO-220/TO-220FP PowerMeshII MOSFET

The PowerMESH II is the evolution of the first generation of MESH OVERLAY™.The layout refinements introduced greatly improve the Ron area figure of merit while keeping the device at the lead ing edge for what concerns swithing speed, gate charge and ruggedness.

STMICROELECTRONICS

意法半导体

N-CHANNEL 600V - 1.8ohm - 3.2A DPAK / IPAK PowerMesh?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 1.

STMICROELECTRONICS

意法半导体

N - CHANNEL 600V - 3.3ohm- 3A - D2PAK/I2PAK PowerMESHII MOSFET

文件:94.35 Kbytes Page:9 Pages

STMICROELECTRONICS

意法半导体

STP3NC60产品属性

  • 类型

    描述

  • 型号

    STP3NC60

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    N-CHANNEL 600V - 3.3ohm - 3A TO-220/TO-220FP PowerMeshII MOSFET

更新时间:2025-11-23 14:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
S
22+
TO-220
6000
十年配单,只做原装
ST
NEW
TO-220F
18689
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订
ST
24+
2000
本站现库存
ST
25+23+
TO-220
16111
绝对原装正品全新进口深圳现货
ST
23+
TO-220
50000
全新原装正品现货,支持订货
ST/
24+
TO-220
5000
全新原装正品,现货销售
-
23+
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
ST
2447
TO-220F
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
ST/意法
23+
TO-220
50000
全新原装正品现货,支持订货
STM
23+
TO220/3
7000
绝对全新原装!100%保质量特价!请放心订购!

STP3NC60数据表相关新闻