Super high dense cell design for extremely low RDS(ON).

STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 35A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 36mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel MOSFET uses advanced trench technology

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Mosfets

N-Channel 100-V (D-S) MOSFET

文件：982.74 Kbytes Page：8 Pages

Fast Switching

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N-Channel Super Trench Power MOSFET

文件：1.0282 Mbytes Page：7 Pages

N-Channel 100-V (D-S) MOSFET

文件：984.26 Kbytes Page：8 Pages

POWER MOS FIELD - EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS

文件：217.02 Kbytes Page：4 Pages