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STP20NM60价格
参考价格:¥8.5476
型号:STP20NM60 品牌:STMicroelectronics 备注:这里有STP20NM60多少钱,2024年最近7天走势,今日出价,今日竞价,STP20NM60批发/采购报价,STP20NM60行情走势销售排行榜,STP20NM60报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
STP20NM60 | N-CHANNEL600V-0.25ohm-20ATO-220/FP/D2PAK/I2PAKMDmeshPowerMOSFET Features 1.Highdv/dtandavalanchecapabilities 2.100avalanchetested 3.Lowinputcapacitanceandgatecharge 4.Lowgateinputresistance Applications 1.Switchingapplications Description TheMDmesh™isanewrevolutionaryPowerMOSFETtechnologythatassociatesthemultiple | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | ||
STP20NM60 | N-channel600V-0.25廓-20A-TO-247-TO-220/FP-D2/I2PAKMDmesh??PowerMOSFET Features 1.Highdv/dtandavalanchecapabilities 2.100avalanchetested 3.Lowinputcapacitanceandgatecharge 4.Lowgateinputresistance Applications 1.Switchingapplications Description TheMDmesh™isanewrevolutionaryPowerMOSFETtechnologythatassociatesthemultiple | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | ||
STP20NM60 | IscN-ChannelMOSFETTransistor 文件:318.38 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
N-CHANNEL650V@Tjmax-0.25Ohm-20AI짼PAK/TO-220/TO-220FP DESCRIPTION TheMDmesh™isanewrevolutionaryMOSFETtechnologythatassociatestheMultipleDrainprocesswiththeCompany’sPowerMESH™horizontallayout.Theresultingproducthasanoutstandinglowon-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.Theadoption | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-CHANNEL600V-0.26ohm-20ATO-220-TO-220FP-TO-247FDmeshPOWERMOSFET(withFASTDIODE) Description TheFDmesh™associatesalladvantagesofreducedon-resistanceandfastswitchingwithanintrinsicfast-recoverybodydiode.Itisthereforestronglyrecommendedforbridgetopologies,in particularZVSphase-shiftconverters. ■Highdv/dtandavalanchecapabilities ■100Avalanch | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-channel600V-0.25廓-20A-TO-247-TO-220/FP-D2/I2PAKMDmesh??PowerMOSFET Features 1.Highdv/dtandavalanchecapabilities 2.100avalanchetested 3.Lowinputcapacitanceandgatecharge 4.Lowgateinputresistance Applications 1.Switchingapplications Description TheMDmesh™isanewrevolutionaryPowerMOSFETtechnologythatassociatesthemultiple | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-CHANNEL600V-0.25ohm-20ATO-220/FP/D2PAK/I2PAKMDmeshPowerMOSFET Features 1.Highdv/dtandavalanchecapabilities 2.100avalanchetested 3.Lowinputcapacitanceandgatecharge 4.Lowgateinputresistance Applications 1.Switchingapplications Description TheMDmesh™isanewrevolutionaryPowerMOSFETtechnologythatassociatesthemultiple | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
iscN-ChannelMosfetTransistor 文件:303.57 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
iscN-ChannelMOSFETTransistor 文件:243.22 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N-CHANNEL600V-0.26ohm-20ATO-220-TO-220FP-TO-247FDmeshPOWERMOSFET(withFASTDIODE) Description TheFDmesh™associatesalladvantagesofreducedon-resistanceandfastswitchingwithanintrinsicfast-recoverybodydiode.Itisthereforestronglyrecommendedforbridgetopologies,in particularZVSphase-shiftconverters. ■Highdv/dtandavalanchecapabilities ■100Avalanch | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-channel600V-0.25廓-20A-TO-247-TO-220/FP-D2/I2PAKMDmesh??PowerMOSFET Features 1.Highdv/dtandavalanchecapabilities 2.100avalanchetested 3.Lowinputcapacitanceandgatecharge 4.Lowgateinputresistance Applications 1.Switchingapplications Description TheMDmesh™isanewrevolutionaryPowerMOSFETtechnologythatassociatesthemultiple | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-CHANNEL600V-0.26ohm-20ATO-220-TO-220FP-TO-247FDmeshPOWERMOSFET(withFASTDIODE) Description TheFDmesh™associatesalladvantagesofreducedon-resistanceandfastswitchingwithanintrinsicfast-recoverybodydiode.Itisthereforestronglyrecommendedforbridgetopologies,in particularZVSphase-shiftconverters. ■Highdv/dtandavalanchecapabilities ■100Avalanch | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
20A,600VN-CHANNELSUPER-JUNCTIONMOSFET 文件:240.75 Kbytes Page:6 Pages | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
N-Channel650-V(D-S)SuperJunctionMOSFET 文件:1.15454 Mbytes Page:11 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 |
STP20NM60产品属性
- 类型
描述
- 型号
STP20NM60
- 功能描述
MOSFET N-Ch 600 Volt 20 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
STM |
13+ |
TO-220AB |
700 |
原装正品现货供 |
|||
ST |
23+ |
TO-220 |
6000 |
全新原装现货、诚信经营! |
|||
ST |
23+ |
TO-TO-220 |
35400 |
全新原装真实库存含13点增值税票! |
|||
ST |
2015+ |
TO220A |
12500 |
全新原装,现货库存长期供应 |
|||
STM |
22+ |
1000 |
TO-220FP-3 |
||||
ST/意法 |
2022+ |
TO-220FP-3 |
3 |
原厂授权代理 价格绝对优势 |
|||
ST |
2305+ |
原厂封装 |
15000 |
15年芯片行业经验/只供原装正品:0755-83267371邹小姐 |
|||
ST |
23+ |
TO-220 |
8795 |
||||
ST/意法半导体 |
2023 |
TO-220-3 |
6000 |
公司原装现货/支持实单 |
|||
22+ |
TO-220FP-3 |
2000 |
特价大甩卖处理 |
STP20NM60规格书下载地址
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- STODD03
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- STOD32W
- STOD32A
- STOD30
- STOD14
- STOD13A
- STOD03B
- STOD03A
- STOD02
- STO875
- STO2ROT
- STO1ROT
- STO1875
- STO1675
- STO1275
- STO11V
- STNS01
- STN9926
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