STP20NM60价格

参考价格:¥8.5476

型号:STP20NM60 品牌:STMicroelectronics 备注:这里有STP20NM60多少钱,2024年最近7天走势,今日出价,今日竞价,STP20NM60批发/采购报价,STP20NM60行情走势销售排行榜,STP20NM60报价。
型号 功能描述 生产厂家&企业 LOGO 操作
STP20NM60

N-CHANNEL600V-0.25ohm-20ATO-220/FP/D2PAK/I2PAKMDmeshPowerMOSFET

Features 1.Highdv/dtandavalanchecapabilities 2.100avalanchetested 3.Lowinputcapacitanceandgatecharge 4.Lowgateinputresistance Applications 1.Switchingapplications Description TheMDmesh™isanewrevolutionaryPowerMOSFETtechnologythatassociatesthemultiple

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS
STP20NM60

N-channel600V-0.25廓-20A-TO-247-TO-220/FP-D2/I2PAKMDmesh??PowerMOSFET

Features 1.Highdv/dtandavalanchecapabilities 2.100avalanchetested 3.Lowinputcapacitanceandgatecharge 4.Lowgateinputresistance Applications 1.Switchingapplications Description TheMDmesh™isanewrevolutionaryPowerMOSFETtechnologythatassociatesthemultiple

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS
STP20NM60

IscN-ChannelMOSFETTransistor

文件:318.38 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

N-CHANNEL650V@Tjmax-0.25Ohm-20AI짼PAK/TO-220/TO-220FP

DESCRIPTION TheMDmesh™isanewrevolutionaryMOSFETtechnologythatassociatestheMultipleDrainprocesswiththeCompany’sPowerMESH™horizontallayout.Theresultingproducthasanoutstandinglowon-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.Theadoption

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

N-CHANNEL600V-0.26ohm-20ATO-220-TO-220FP-TO-247FDmeshPOWERMOSFET(withFASTDIODE)

Description TheFDmesh™associatesalladvantagesofreducedon-resistanceandfastswitchingwithanintrinsicfast-recoverybodydiode.Itisthereforestronglyrecommendedforbridgetopologies,in particularZVSphase-shiftconverters. ■Highdv/dtandavalanchecapabilities ■100Avalanch

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

N-channel600V-0.25廓-20A-TO-247-TO-220/FP-D2/I2PAKMDmesh??PowerMOSFET

Features 1.Highdv/dtandavalanchecapabilities 2.100avalanchetested 3.Lowinputcapacitanceandgatecharge 4.Lowgateinputresistance Applications 1.Switchingapplications Description TheMDmesh™isanewrevolutionaryPowerMOSFETtechnologythatassociatesthemultiple

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

N-CHANNEL600V-0.25ohm-20ATO-220/FP/D2PAK/I2PAKMDmeshPowerMOSFET

Features 1.Highdv/dtandavalanchecapabilities 2.100avalanchetested 3.Lowinputcapacitanceandgatecharge 4.Lowgateinputresistance Applications 1.Switchingapplications Description TheMDmesh™isanewrevolutionaryPowerMOSFETtechnologythatassociatesthemultiple

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

iscN-ChannelMosfetTransistor

文件:303.57 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

iscN-ChannelMOSFETTransistor

文件:243.22 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

N-CHANNEL600V-0.26ohm-20ATO-220-TO-220FP-TO-247FDmeshPOWERMOSFET(withFASTDIODE)

Description TheFDmesh™associatesalladvantagesofreducedon-resistanceandfastswitchingwithanintrinsicfast-recoverybodydiode.Itisthereforestronglyrecommendedforbridgetopologies,in particularZVSphase-shiftconverters. ■Highdv/dtandavalanchecapabilities ■100Avalanch

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

N-channel600V-0.25廓-20A-TO-247-TO-220/FP-D2/I2PAKMDmesh??PowerMOSFET

Features 1.Highdv/dtandavalanchecapabilities 2.100avalanchetested 3.Lowinputcapacitanceandgatecharge 4.Lowgateinputresistance Applications 1.Switchingapplications Description TheMDmesh™isanewrevolutionaryPowerMOSFETtechnologythatassociatesthemultiple

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

N-CHANNEL600V-0.26ohm-20ATO-220-TO-220FP-TO-247FDmeshPOWERMOSFET(withFASTDIODE)

Description TheFDmesh™associatesalladvantagesofreducedon-resistanceandfastswitchingwithanintrinsicfast-recoverybodydiode.Itisthereforestronglyrecommendedforbridgetopologies,in particularZVSphase-shiftconverters. ■Highdv/dtandavalanchecapabilities ■100Avalanch

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

20A,600VN-CHANNELSUPER-JUNCTIONMOSFET

文件:240.75 Kbytes Page:6 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

N-Channel650-V(D-S)SuperJunctionMOSFET

文件:1.15454 Mbytes Page:11 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

STP20NM60产品属性

  • 类型

    描述

  • 型号

    STP20NM60

  • 功能描述

    MOSFET N-Ch 600 Volt 20 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2024-3-29 9:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
STM
13+
TO-220AB
700
原装正品现货供
ST
23+
TO-220
6000
全新原装现货、诚信经营!
ST
23+
TO-TO-220
35400
全新原装真实库存含13点增值税票!
ST
2015+
TO220A
12500
全新原装,现货库存长期供应
STM
22+
1000
TO-220FP-3
ST/意法
2022+
TO-220FP-3
3
原厂授权代理 价格绝对优势
ST
2305+
原厂封装
15000
15年芯片行业经验/只供原装正品:0755-83267371邹小姐
ST
23+
TO-220
8795
ST/意法半导体
2023
TO-220-3
6000
公司原装现货/支持实单
22+
TO-220FP-3
2000
特价大甩卖处理

STP20NM60芯片相关品牌

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  • PF
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  • TTELEC
  • XFMRS

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