型号 功能描述 生产厂家&企业 LOGO 操作
STP200NF04L

N-CHANNEL 40V - 3 m ohm - 120 A TO-220/D2PAK/I2PAK STripFET II MOSFET

DESCRIPTION This MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignement steps therefore a remarkab

STMICROELECTRONICS

意法半导体

N-CHANNEL 40V - 3 m ohm - 120 A TO-220/D2PAK/I2PAK STripFET II MOSFET

DESCRIPTION This MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignement steps therefore a remarkab

STMICROELECTRONICS

意法半导体

N-CHANNEL 40V - 3 m ohm - 120 A TO-220/D2PAK/I2PAK STripFET II MOSFET

DESCRIPTION This MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignement steps therefore a remarkab

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 120A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance; -RDS(on) = 3.7mΩ(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

N-CHANNEL 40V - 120 A - 3.3 mOHM TO-220/D2PAK/I2PAK STripFETII MOSFET

DESCRIPTION This MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable

STMICROELECTRONICS

意法半导体

N-CHANNEL 40V - 3 m ohm - 120 A TO-220/D2PAK/I2PAK STripFET II MOSFET

DESCRIPTION This MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignement steps therefore a remarkab

STMICROELECTRONICS

意法半导体

STP200NF04L产品属性

  • 类型

    描述

  • 型号

    STP200NF04L

  • 功能描述

    MOSFET N-Ch 30 V 3 mOhm 120 A STripFET

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-8-8 14:20:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
22+
TO-220
155217
原装正品现货,可开13个点税
ST
20+
TO-220
38560
原装优势主营型号-可开原型号增税票
ST(意法)
23+
10000
只做全新原装,实单来
ST
12+
TO-220
400
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ST
21+
TO220
4640
原装现货假一赔十
ST
25+
TOTO-220ABNONISOL
35400
独立分销商 公司只做原装 诚心经营 免费试样正品保证
ST
22+
TO2203
9000
原厂渠道,现货配单
ST
24+
TO-220-3
823
ST
24+
TO-220-3(直引
794
原装现货假一罚十
ST
23+
TO-220
50000
全新原装正品现货,支持订货

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