N-CHANNEL 30V - 0.0032 ohm - 120A D짼PAK/I짼PAK/TO-220 STripFET??II POWER MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 120A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 3.6mΩ(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N沟道30V - 0.0032Ohm - 120A D2PAK STripFET™ II MOSFET

This Power MOSFET is the latest development of STMicroelectronics unique \\\"Single Feature Size™\\\" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable ma • Standard threshold drive \n• 100% avalanche tested;

N-channel 30V - 0.0032ohm - 120A - D2PAK/I2PAK/TO-220 STripFET TM III Power MOSFET

文件：449.62 Kbytes Page：18 Pages

N-CHANNEL 30V - 0.002 ohm - 120A TO-247 ULTRA LOW ON-RESISTANCE STripFET??II MOSFET

DESCRIPTION This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is particularly suitable in OR-ing function circuits and synchronous rectification. ■ TYPICAL RDS(on) = 0.002 Ω ■ 100 AV

N-channel 30V - 0.0032ohm - 120A - D2PAK/I2PAK/TO-220 STripFET TM III Power MOSFET

文件：449.62 Kbytes Page：18 Pages

N-channel 30V - 0.0032ohm - 120A - D2PAK/I2PAK/TO-220 STripFET TM III Power MOSFET

文件：449.62 Kbytes Page：18 Pages