N-channel 800 V, 0.29 Ω typ., 14 A MDmesh™ K5 Power MOSFET in a TO-220 package

Features  Industry’s lowest RDS(on) x area  Industry’s best FoM (figure of merit)  Ultra-low gate charge  100 avalanche tested  Zener-protected Applications  Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technolog

N沟道800 V、0.29 Ohm典型值、14 A MDmesh K5功率MOSFET，TO-220封装

N-channel 800 V, 0.29 Ω typ., 14 A MDmesh™ K5 Power MOSFET in a D²PAK package

Features  Industry’s lowest RDS(on) x area  Industry’s best FoM (figure of merit)  Ultra-low gate charge  100 avalanche tested  Zener-protected Applications  Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technolog

N-channel 800 V, 0.29 Ω typ., 14 A MDmesh™ K5 Power MOSFET in a TO-220FP package

Features  Industry’s lowest RDS(on) x area  Industry’s best figure of merit (FoM)  Ultra-low gate charge  100 avalanche tested  Zener-protected Applications  Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technolog