isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=80A@ TC=25℃ ·Drain Source Voltage -VDSS=30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.3mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-channel 30 V, 0.0024 ohm , 80 A, DPAK, IPAK, TO-220

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150W Ultra-High Peak Power Supply

Features * Universal AG input / Full range * Withstand 300VAG surge input for 5 seconds * 300 peak power capability * Builtin constant current limiting circuit * Fanless design, Cooling by free air convection * Protections: Short circuit / Overload / Over voltage / Over temperature * Built

N-Channel Depletion-Mode MOSFET

General Description The LND150 is a high voltage N-channel depletion mode (normally-on) transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. The LND150 is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources,

N-Channel Depletion-Mode DMOS FET

General Description The LND150 is a high voltage N-channel depletion mode (normally-on) transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. The LND150 is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources,

N-Channel Depletion-Mode DMOS FET

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N-Channel Depletion-Mode DMOS FET

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