isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 0.2Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

P - CHANNEL 60V - 0.18 ohm - 12A TO-220 STripFET POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkab

P-CHANNEL 60V - 0.18 ohm - 12A TO-220/TO-220FP STripFET II POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkab

N-Channel 60 V(D-S) MOSFET

文件：1.09154 Mbytes Page：8 Pages

P - CHANNEL 60V - 0.18 ohm - 12A TO-220 STripFET POWER MOSFET

P-CHANNEL 60V - 0.18 ohm - 12A TO-220/TO-220FP STripFET II POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkab

P-Channel 60-V (D-S) MOSFET

文件：953.04 Kbytes Page：7 Pages