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STP11N52K3价格
参考价格：￥9.1684
型号：STP11N52K3 品牌：STMICROELECTRONICS 备注：这里有STP11N52K3多少钱，2025年最近7天走势，今日出价，今日竞价，STP11N52K3批发/采购报价，STP11N52K3行情走势销售排行榜，STP11N52K3报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STP11N52K3 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 10A@ TC=25℃ ·Drain Source Voltage -VDSS= 525V(Min) -RDS(on) = 0.51Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 |   | |
STP11N52K3 | N-channel 525 V, 0.41 ohm, 10 A SuperMESH3 Power MOSFET Description These devices are N-channel Power MOSFETs made using the SuperMESH3™ technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure. The resulting transistor has an extremely low on resistance, superio | STMICROELECTRONICS 意法半导体 | | |
STP11N52K3 | N-Channel 650 V (D-S) MOSFET 文件：1.03514 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | |
STP11N52K3 | MOSFET N-CH 525V 10A TO-220 | STMICROELECTRONICS 意法半导体 | | |
N-channel 525 V, 0.41 ohm, 10 A SuperMESH3 Power MOSFET Description These devices are N-channel Power MOSFETs made using the SuperMESH3™ technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure. The resulting transistor has an extremely low on resistance, superio | STMICROELECTRONICS 意法半导体 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 10A@ TC=25℃ ·Drain Source Voltage -VDSS= 525V(Min) -RDS(on) = 0.51Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 10A@ TC=25℃ ·Drain Source Voltage -VDSS= 525V(Min) -RDS(on) = 0.51Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
N-channel 525 V, 0.41 ohm, 10 A SuperMESH3 Power MOSFET Description These devices are N-channel Power MOSFETs made using the SuperMESH3™ technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure. The resulting transistor has an extremely low on resistance, superio | STMICROELECTRONICS 意法半导体 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.85384 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | |
STP11N52K3产品属性
- 类型
描述
- 型号
STP11N52K3
- 功能描述
MOSFET N-Ch 525V 0.41 Ohm 10A SuperMESH3 125w
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
23+ |
TO-220铁头 |
50000 |
全新原装正品现货,支持订货 |
|||
ST/意法半导体 |
21+ |
TO-220-3 |
8860 |
只做原装,质量保证 |
|||
ST |
23+ |
TO-220 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
ST/意法半导体 |
24+ |
TO-220-3 |
6000 |
全新原装深圳仓库现货有单必成 |
|||
ST/意法 |
23+ |
TO-220 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
ST/意法半导体 |
23+ |
TO-220-3 |
12820 |
正规渠道,只有原装! |
|||
ST/意法 |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
|||
ST/意法 |
24+ |
NA/ |
110 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ST |
25+23+ |
TO220 |
19438 |
绝对原装正品全新进口深圳现货 |
|||
ST |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
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STP11N52K3规格书下载地址
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